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Discrete Semiconductor Products

APTM120UM70DAG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 171A I(D), 1200V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

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Discrete Semiconductor Products

APTM120UM70DAG

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 171A I(D), 1200V, 0.08OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTM120UM70DAG
Current - Continuous Drain (Id) @ 25°C171 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]1650 nC
Input Capacitance (Ciss) (Max) @ Vds43500 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseSP6
Power Dissipation (Max) [Max]5000 W
Rds On (Max) @ Id, Vgs80 mOhm
Supplier Device PackageSP6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3$ 434.88
Microchip DirectN/A 1$ 434.88
50$ 360.33
100$ 323.05
250$ 310.63
500$ 273.35
1000$ 248.50
5000$ 218.68
NewarkEach 1$ 434.88
5$ 298.20
50$ 288.26
100$ 278.32
250$ 278.32
500$ 278.32

Description

General part information

APTM120H140FT1G-Module Series

* FREDFETs

* Low RDSon

* Low input and Miller capacitance