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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STB30N65M2AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.15 OHM TYP., 20 A MDMESH M2 POWER MOSFET IN A D2PAK PACKAGE

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STB30N65M2AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 0.15 OHM TYP., 20 A MDMESH M2 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB30N65M2AG
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]30.8 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]1440 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)190 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs180 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.08
10$ 3.42
100$ 2.77
500$ 2.46
Digi-Reel® 1$ 4.08
10$ 3.42
100$ 2.77
500$ 2.46
N/A 976$ 5.15
Tape & Reel (TR) 1000$ 1.90
NewarkEach (Supplied on Cut Tape) 1$ 5.70
10$ 4.43
25$ 4.33
50$ 3.90
100$ 3.46
250$ 3.42
500$ 3.37
1000$ 3.20

Description

General part information

STB30 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.