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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STB30N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.125 OHM TYP., 22 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheet+17
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

STB30N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.125 OHM TYP., 22 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB30N65M5
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs64 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2880 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max) [Max]140 W
Rds On (Max) @ Id, Vgs139 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 6.43
10$ 5.40
100$ 4.37
500$ 3.88
Digi-Reel® 1$ 6.43
10$ 5.40
100$ 4.37
500$ 3.88
N/A 1166$ 7.24
Tape & Reel (TR) 1000$ 3.33
2000$ 3.13

Description

General part information

STB30 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.