Discrete Semiconductor Products

STB30NF20L

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STMicroelectronics

N-CHANNEL 200 V, 0.065 OHM, 30 A, D2PAK STRIPFET(TM) POWER MOSFET

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Discrete Semiconductor Products

STB30NF20L

Active

STMicroelectronics

N-CHANNEL 200 V, 0.065 OHM, 30 A, D2PAK STRIPFET(TM) POWER MOSFET

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB30NF20L

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1990 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

STB30 Series

Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Grade	Operating Temperature	Power Dissipation (Max) [Max]
STMicroelectronics STB30N80K5	1530 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	Surface Mount	43 nC	5 V	10 V	24 A	150 °C	-55 °C	N-Channel	800 V	MOSFET (Metal Oxide)	180 mOhm	30 V	250 W
STMicroelectronics STB30NF20L		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	Surface Mount		3 V	10 V	30 A	175 °C	-55 °C	N-Channel	200 V	MOSFET (Metal Oxide)	75 mOhm	20 V	150 W	65 nC	1990 pF	AEC-Q101	Automotive
STMicroelectronics STB30NF10T4		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	Surface Mount		4 V	10 V	35 A	175 °C	-55 °C	N-Channel	100 V	MOSFET (Metal Oxide)	45 mOhm	20 V	115 W	55 nC
STMicroelectronics STB30N65M5		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	Surface Mount	64 nC	5 V	10 V	22 A			N-Channel	650 V	MOSFET (Metal Oxide)	139 mOhm	25 V			2880 pF			150 °C	140 W
STMicroelectronics STB30N65DM6AG	2000 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	Surface Mount		4.75 V	10 V	28 A	150 °C	-55 °C	N-Channel	650 V	MOSFET (Metal Oxide)	115 mOhm	25 V	223 W	46 nC		AEC-Q101	Automotive
STMicroelectronics STB30N65M2AG		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	Surface Mount		4 V	10 V	20 A	150 °C	-55 °C	N-Channel	650 V	MOSFET (Metal Oxide)	180 mOhm	25 V	190 W	30.8 nC	1440 pF	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.23
		10	$ 1.85
		100	$ 1.48
		500	$ 1.25
	Digi-Reel®	1	$ 2.23
		10	$ 1.85
		100	$ 1.48
		500	$ 1.25
	N/A	1411	$ 2.31
	Tape & Reel (TR)	1000	$ 1.06
		2000	$ 1.01
		5000	$ 0.97
		10000	$ 0.94
Newark	Each (Supplied on Cut Tape)	1	$ 2.78
		10	$ 2.28
		25	$ 2.12
		50	$ 1.96
		100	$ 1.80
		250	$ 1.69
		500	$ 1.58
		1000	$ 1.53

Description

General part information

STB30 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

STB30NF20L

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STB30NF20L

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Technical Specifications

STB30 Series

Pricing

Description

STB30 Series

Documents

Datasheet

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STB30 Series