TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

STB30NF20L

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STMicroelectronics

N-CHANNEL 200 V, 0.065 OHM, 30 A, D2PAK STRIPFET(TM) POWER MOSFET

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Search across all available documentation for this part.

DocumentsDatasheet UM1575 +13

Discrete Semiconductor Products

STB30NF20L

Active

STMicroelectronics

N-CHANNEL 200 V, 0.065 OHM, 30 A, D2PAK STRIPFET(TM) POWER MOSFET

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DocumentsDatasheet UM1575 +13

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB30NF20L

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1990 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

STB30N65DM6AG Series

Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package

Part	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STB30N80K5	MOSFET (Metal Oxide)	TO-263 (D2PAK)	1530 pF	24 A	-55 °C	150 °C	5 V	800 V	180 mOhm	30 V	10 V	250 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	43 nC
STMicroelectronics STB30NF20L	MOSFET (Metal Oxide)	D2PAK	1990 pF	30 A	-55 °C	175 ░C	3 V	200 V	75 mOhm	20 V	10 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel		Automotive	65 nC	AEC-Q101	150 W
STMicroelectronics STB30N65DM6AG	MOSFET (Metal Oxide)	TO-263 (D2PAK)	2000 pF	28 A	-55 °C	150 °C	4.75 V	650 V	115 mOhm	25 V	10 V	223 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	46 nC	Automotive		AEC-Q101
STMicroelectronics STB30N65M2AG	MOSFET (Metal Oxide)	TO-263 (D2PAK)		20 A	-55 °C	150 °C	4 V	650 V	180 mOhm	25 V	10 V	190 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	N-Channel	30.8 nC	Automotive		AEC-Q101		1440 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.23
		10	$ 1.85
		100	$ 1.48
		500	$ 1.25
	Digi-Reel®	1	$ 2.23
		10	$ 1.85
		100	$ 1.48
		500	$ 1.25
	Tape & Reel (TR)	1000	$ 1.06
		2000	$ 1.01
		5000	$ 0.97
		10000	$ 0.94
Newark	Each (Supplied on Cut Tape)	1	$ 2.78
		10	$ 2.28
		25	$ 2.12
		50	$ 1.96
		100	$ 1.80
		250	$ 1.69
		500	$ 1.58
		1000	$ 1.53

Description

General part information

STB30N65DM6AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

STB30NF20L

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STB30NF20L

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Technical Specifications

STB30N65DM6AG Series

Pricing

Description

STB30N65DM6AG Series

Documents

Datasheet

UM1575

TN1224

AN4390

Flyers (5 of 6)

Flyers (5 of 6)

AN3267

Flyers (5 of 6)

AN1703

Flyers (5 of 6)

TN1225

Flyers (5 of 6)

AN4337

Flyers (5 of 6)

AN4191

STB30N65DM6AG Series