Discrete Semiconductor Products

STB30N65DM6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 102 MOHM TYP., 28 A MDMESH DM6 POWER MOSFET IN A D2PAK PACKAGE

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DocumentsDatasheet Product Change Notice EN

Discrete Semiconductor Products

STB30N65DM6AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 102 MOHM TYP., 28 A MDMESH DM6 POWER MOSFET IN A D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet Product Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB30N65DM6AG

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	46 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	223 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	115 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STB30 Series

Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Grade	Operating Temperature	Power Dissipation (Max) [Max]
STMicroelectronics STB30N80K5	1530 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	Surface Mount	43 nC	5 V	10 V	24 A	150 °C	-55 °C	N-Channel	800 V	MOSFET (Metal Oxide)	180 mOhm	30 V	250 W
STMicroelectronics STB30NF20L		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	Surface Mount		3 V	10 V	30 A	175 °C	-55 °C	N-Channel	200 V	MOSFET (Metal Oxide)	75 mOhm	20 V	150 W	65 nC	1990 pF	AEC-Q101	Automotive
STMicroelectronics STB30NF10T4		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	Surface Mount		4 V	10 V	35 A	175 °C	-55 °C	N-Channel	100 V	MOSFET (Metal Oxide)	45 mOhm	20 V	115 W	55 nC
STMicroelectronics STB30N65M5		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	Surface Mount	64 nC	5 V	10 V	22 A			N-Channel	650 V	MOSFET (Metal Oxide)	139 mOhm	25 V			2880 pF			150 °C	140 W
STMicroelectronics STB30N65DM6AG	2000 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	Surface Mount		4.75 V	10 V	28 A	150 °C	-55 °C	N-Channel	650 V	MOSFET (Metal Oxide)	115 mOhm	25 V	223 W	46 nC		AEC-Q101	Automotive
STMicroelectronics STB30N65M2AG		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	Surface Mount		4 V	10 V	20 A	150 °C	-55 °C	N-Channel	650 V	MOSFET (Metal Oxide)	180 mOhm	25 V	190 W	30.8 nC	1440 pF	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.22
		10	$ 4.39
		100	$ 3.61
	Digi-Reel®	1	$ 6.22
		10	$ 4.39
		100	$ 3.61
	N/A	878	$ 6.34
	Tape & Reel (TR)	1000	$ 2.95
Newark	Each (Supplied on Cut Tape)	1	$ 7.67
		10	$ 5.87
		25	$ 5.52
		50	$ 5.16
		100	$ 4.81
		250	$ 4.80
		500	$ 4.52
		1000	$ 4.51

Description

General part information

STB30 Series

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.