STB30NF10T4
ActivePOWER MOSFET, N CHANNEL, 100 V, 15 A, 0.038 OHM, TO-263 (D2PAK), SURFACE MOUNT
STB30NF10T4
ActivePOWER MOSFET, N CHANNEL, 100 V, 15 A, 0.038 OHM, TO-263 (D2PAK), SURFACE MOUNT
Technical Specifications
Parameters and characteristics for this part
| Specification | STB30NF10T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 35 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 55 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 115 W |
| Rds On (Max) @ Id, Vgs | 45 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
STB30 Series
Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a D2PAK package
| Part | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Supplier Device Package | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) @ Id, Vgs | Vgs (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Qualification | Grade | Operating Temperature | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 1530 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | Surface Mount | 43 nC | 5 V | 10 V | 24 A | 150 °C | -55 °C | N-Channel | 800 V | MOSFET (Metal Oxide) | 180 mOhm | 30 V | 250 W | ||||||
 STMicroelectronics | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | D2PAK | Surface Mount | 3 V | 10 V | 30 A | 175 °C | -55 °C | N-Channel | 200 V | MOSFET (Metal Oxide) | 75 mOhm | 20 V | 150 W | 65 nC | 1990 pF | AEC-Q101 | Automotive | ||||
STMicroelectronics | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | D2PAK | Surface Mount | 4 V | 10 V | 35 A | 175 °C | -55 °C | N-Channel | 100 V | MOSFET (Metal Oxide) | 45 mOhm | 20 V | 115 W | 55 nC | |||||||
 STMicroelectronics | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | D2PAK | Surface Mount | 64 nC | 5 V | 10 V | 22 A | N-Channel | 650 V | MOSFET (Metal Oxide) | 139 mOhm | 25 V | 2880 pF | 150 °C | 140 W | |||||||
 STMicroelectronics | 2000 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | Surface Mount | 4.75 V | 10 V | 28 A | 150 °C | -55 °C | N-Channel | 650 V | MOSFET (Metal Oxide) | 115 mOhm | 25 V | 223 W | 46 nC | AEC-Q101 | Automotive | ||||
STMicroelectronics | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | TO-263 (D2PAK) | Surface Mount | 4 V | 10 V | 20 A | 150 °C | -55 °C | N-Channel | 650 V | MOSFET (Metal Oxide) | 180 mOhm | 25 V | 190 W | 30.8 nC | 1440 pF | AEC-Q101 | Automotive |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB30 Series
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Documents
Technical documentation and resources