
Discrete Semiconductor Products
PBSS4160QAZ
ActiveFreescale Semiconductor - NXP
TRANS GP BJT NPN 60V 1A 1000MW 3-PIN DFN-D EP T/R
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Discrete Semiconductor Products
PBSS4160QAZ
ActiveFreescale Semiconductor - NXP
TRANS GP BJT NPN 60V 1A 1000MW 3-PIN DFN-D EP T/R
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4160QAZ |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 85 |
| Frequency - Transition | 180 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 3-XDFN Exposed Pad |
| Power - Max [Max] | 1 W |
| Qualification | AEC-Q100 |
| Supplier Device Package | DFN1010D-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 245 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS4160 Series
Very low collector-emitter saturation voltage VCEsat
High collector current capability ICand ICM
High collector current gain hFEat high IC
Documents
Technical documentation and resources