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3-XFDFN Exposed Pad
Discrete Semiconductor Products

PBSS4160QAZ

Active
Freescale Semiconductor - NXP

TRANS GP BJT NPN 60V 1A 1000MW 3-PIN DFN-D EP T/R

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3-XFDFN Exposed Pad
Discrete Semiconductor Products

PBSS4160QAZ

Active
Freescale Semiconductor - NXP

TRANS GP BJT NPN 60V 1A 1000MW 3-PIN DFN-D EP T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160QAZ
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]85
Frequency - Transition180 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XDFN Exposed Pad
Power - Max [Max]1 W
QualificationAEC-Q100
Supplier Device PackageDFN1010D-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic245 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 5000$ 0.07
DigikeyCut Tape (CT) 1$ 0.44
10$ 0.31
100$ 0.16
500$ 0.14
1000$ 0.11
2000$ 0.10
Digi-Reel® 1$ 0.44
10$ 0.31
100$ 0.16
500$ 0.14
1000$ 0.11
2000$ 0.10
Tape & Reel (TR) 5000$ 0.07

Description

General part information

PBSS4160 Series

Very low collector-emitter saturation voltage VCEsat

High collector current capability ICand ICM

High collector current gain hFEat high IC