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SOT-323
Discrete Semiconductor Products

PBSS4160U,115

Active
Nexperia USA Inc.

60 V, 1 A NPN LOW VCESAT (BISS) TRANSISTOR

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SOT-323
Discrete Semiconductor Products

PBSS4160U,115

Active
Nexperia USA Inc.

60 V, 1 A NPN LOW VCESAT (BISS) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160U,115
Current - Collector (Ic) (Max) [Max]750 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-323, SC-70
Power - Max [Max]415 mW
QualificationAEC-Q100
Supplier Device PackageSOT-323
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic280 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.37
10$ 0.23
100$ 0.14
500$ 0.11
1000$ 0.09
Digi-Reel® 1$ 0.37
10$ 0.23
100$ 0.14
500$ 0.11
1000$ 0.09
N/A 20334$ 0.46
Tape & Reel (TR) 3000$ 0.08
6000$ 0.07
9000$ 0.07
15000$ 0.06
21000$ 0.06
30000$ 0.06
75000$ 0.05
150000$ 0.05

Description

General part information

PBSS4160 Series

NPN/PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.