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SOT1118
Discrete Semiconductor Products

PBSS4160PANP,115

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Nexperia USA Inc.

60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR

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SOT1118
Discrete Semiconductor Products

PBSS4160PANP,115

Active
Nexperia USA Inc.

60 V, 1 A NPN/PNP LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160PANP,115
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]150
Frequency - Transition175 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]510 mW
QualificationAEC-Q100
Supplier Device Package6-HUSON (2x2)
Transistor Type1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic0.12 V
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.49
10$ 0.42
100$ 0.29
500$ 0.23
1000$ 0.18
Digi-Reel® 1$ 0.49
10$ 0.42
100$ 0.29
500$ 0.23
1000$ 0.18
N/A 0$ 0.98
Tape & Reel (TR) 3000$ 0.14

Description

General part information

PBSS4160 Series

NPN/PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.