Zenode.ai Logo
Beta
SOT457
Discrete Semiconductor Products

PBSS4160DS-QX

Active
Nexperia USA Inc.

60 V, 1 A NPN/NPN LOW VCESAT TRANSISTOR

Deep-Dive with AI

Search across all available documentation for this part.

SOT457
Discrete Semiconductor Products

PBSS4160DS-QX

Active
Nexperia USA Inc.

60 V, 1 A NPN/NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160DS-QX
Current - Collector (Ic) (Max) [Max]870 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]250
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-457, SC-74
Power - Max [Max]420 mW
Supplier Device Package6-TSOP
Transistor Type2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.16
Tape & Reel (TR) 3000$ 0.11
6000$ 0.10
9000$ 0.09
30000$ 0.09
75000$ 0.09

Description

General part information

PBSS4160 Series

NPN/PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.