
Discrete Semiconductor Products
PBSS4160XX
ActiveNexperia USA Inc.
60 V, 1 A NPN LOW VCESAT BISS TRANSISTOR
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Discrete Semiconductor Products
PBSS4160XX
ActiveNexperia USA Inc.
60 V, 1 A NPN LOW VCESAT BISS TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS4160XX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 170 |
| Frequency - Transition | 180 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-243AA |
| Power - Max [Max] | 1.35 W |
| Qualification | AEC-Q101 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 200 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.45 | |
| Digi-Reel® | 1 | $ 0.45 | ||
| N/A | 0 | $ 0.15 | ||
| 10874 | $ 0.15 | |||
| Tape & Reel (TR) | 1000 | $ 0.11 | ||
| 2000 | $ 0.10 | |||
| 5000 | $ 0.09 | |||
| 10000 | $ 0.08 | |||
| 25000 | $ 0.08 | |||
| 50000 | $ 0.07 | |||
| 100000 | $ 0.07 | |||
Description
General part information
PBSS4160 Series
NPN/PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources