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SOT-89
Discrete Semiconductor Products

PBSS4160XX

Active
Nexperia USA Inc.

60 V, 1 A NPN LOW VCESAT BISS TRANSISTOR

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SOT-89
Discrete Semiconductor Products

PBSS4160XX

Active
Nexperia USA Inc.

60 V, 1 A NPN LOW VCESAT BISS TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160XX
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]170
Frequency - Transition180 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.35 W
QualificationAEC-Q101
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
Digi-Reel® 1$ 0.45
N/A 0$ 0.15
10874$ 0.15
Tape & Reel (TR) 1000$ 0.11
2000$ 0.10
5000$ 0.09
10000$ 0.08
25000$ 0.08
50000$ 0.07
100000$ 0.07

Description

General part information

PBSS4160 Series

NPN/PNP low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.