Discrete Semiconductor Products

IPB60R080P7ATMA1

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INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 80 MOHM;

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Datasheet +1

Discrete Semiconductor Products

IPB60R080P7ATMA1

Active

INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; D2PAK TO-263 PACKAGE; 80 MOHM;

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB60R080P7ATMA1

Current - Continuous Drain (Id) @ 25°C	37 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	51 nC
Input Capacitance (Ciss) (Max) @ Vds	2180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	129 W
Rds On (Max) @ Id, Vgs [Max]	80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

CoolMOS P7 Series

Part	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]
INFINEON IPAN80R360P7XKSA1	MOSFET (Metal Oxide)	PG-TO220-FP	10 V	3.5 V	13 A	Through Hole	800 V	150 °C	-55 °C	360 mOhm	N-Channel	30 nC	20 V	930 pF	TO-220-3 Full Pack
INFINEON IPL60R185P7AUMA1	MOSFET (Metal Oxide)	PG-VSON-4	10 V	4 V	19 A	Surface Mount	600 V	150 °C	-40 °C		N-Channel	25 nC	20 V		4-PowerTSFN	81 W	185 mOhm	1081 pF
INFINEON IPP60R360P7XKSA1	MOSFET (Metal Oxide)	PG-TO220-3	10 V	4 V	9 A	Through Hole	650 V	150 °C	-55 °C	360 mOhm	N-Channel		20 V		TO-220-3	41 W		555 pF	13 nC
INFINEON IPA80R1K4P7XKSA1	MOSFET (Metal Oxide)		10 V		4 A	Through Hole	800 V	150 °C	-55 °C	1.4 Ohm	N-Channel	10 nC	20 V	250 pF	TO-220-3 Full Pack	24 W				3.5 V
INFINEON IPU80R900P7AKMA1	MOSFET (Metal Oxide)	PG-TO251-3	10 V	3.5 V	6 A	Through Hole	800 V	150 °C	-55 °C	900 mOhm	N-Channel	15 nC	20 V		IPAK TO-251-3 Short Leads TO-251AA	45 W		350 pF
INFINEON IPLK80R900P7ATMA1	MOSFET (Metal Oxide)	PG-TDSON-8				Surface Mount	800 V						20 V		8-PowerTDFN
INFINEON IPD80R1K4P7ATMA1	MOSFET (Metal Oxide)	PG-TO252-2	10 V		4 A	Surface Mount	800 V	150 °C	-55 °C	1.4 Ohm	N-Channel	10 nC	20 V	250 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	32 W				3.5 V
INFINEON IPB60R080P7ATMA1	MOSFET (Metal Oxide)		10 V	4 V	37 A	Surface Mount	600 V	150 °C	-55 °C		N-Channel	51 nC	20 V	2180 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	129 W	80 mOhm
INFINEON IPN60R360P7SATMA1	MOSFET (Metal Oxide)	PG-SOT223	10 V	4 V	9 A	Surface Mount	600 V	150 °C	-40 °C	360 mOhm	N-Channel		20 V		TO-261-4 TO-261AA	7 W		555 pF	13 nC
INFINEON IPZA60R099P7XKSA1	MOSFET (Metal Oxide)	PG-TO247-4	10 V	4 V	31 A	Through Hole	600 V	150 °C	-55 °C	99 mOhm	N-Channel	45 nC	20 V	1952 pF	TO-247-4	117 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.23
		10	$ 3.48
		100	$ 2.49
		500	$ 2.07
	Digi-Reel®	1	$ 5.23
		10	$ 3.48
		100	$ 2.49
		500	$ 2.07
	N/A	1248	$ 4.89
	Tape & Reel (TR)	1000	$ 2.01
Mouser	N/A	1	$ 4.09
		10	$ 3.20
		100	$ 2.38
		500	$ 1.98
		1000	$ 1.85
		2000	$ 1.84
Newark	Each (Supplied on Cut Tape)	1	$ 4.77
		10	$ 3.45
		25	$ 3.15
		50	$ 2.84
		100	$ 2.53
		250	$ 2.29
		500	$ 2.05

Description

General part information

CoolMOS P7 Series

The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Product Brief 600V CoolMOS™ P7 (PDF)

Product Catalogs