Beta

⌘K

PG-TO-220-FP

Discrete Semiconductor Products

IPAN80R360P7XKSA1

Active

MOSFET N-CH 800V 13A TO220

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

PG-TO-220-FP

Discrete Semiconductor Products

IPAN80R360P7XKSA1

Active

MOSFET N-CH 800V 13A TO220

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPAN80R360P7XKSA1

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	930 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.96
	Tube	500	$ 1.20
Mouser	N/A	1	$ 2.84
		10	$ 1.56
		100	$ 1.39
		250	$ 1.30
		500	$ 1.12
		1000	$ 1.00

Description

General part information

CoolMOS P7 Series

N-Channel 800 V 13A (Tc) 30W (Tc) Through Hole PG-TO220-FP

Documents

Technical documentation and resources

Datasheet

CoolMOS P7 Series

Part	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]
INFINEON IPAN80R360P7XKSA1	MOSFET (Metal Oxide)	PG-TO220-FP	10 V	3.5 V	13 A	Through Hole	800 V	150 °C	-55 °C	360 mOhm	N-Channel	30 nC	20 V	930 pF	TO-220-3 Full Pack
INFINEON IPL60R185P7AUMA1	MOSFET (Metal Oxide)	PG-VSON-4	10 V	4 V	19 A	Surface Mount	600 V	150 °C	-40 °C		N-Channel	25 nC	20 V		4-PowerTSFN	81 W	185 mOhm	1081 pF
INFINEON IPP60R360P7XKSA1	MOSFET (Metal Oxide)	PG-TO220-3	10 V	4 V	9 A	Through Hole	650 V	150 °C	-55 °C	360 mOhm	N-Channel		20 V		TO-220-3	41 W		555 pF	13 nC
INFINEON IPA80R1K4P7XKSA1	MOSFET (Metal Oxide)		10 V		4 A	Through Hole	800 V	150 °C	-55 °C	1.4 Ohm	N-Channel	10 nC	20 V	250 pF	TO-220-3 Full Pack	24 W				3.5 V
INFINEON IPU80R900P7AKMA1	MOSFET (Metal Oxide)	PG-TO251-3	10 V	3.5 V	6 A	Through Hole	800 V	150 °C	-55 °C	900 mOhm	N-Channel	15 nC	20 V		IPAK TO-251-3 Short Leads TO-251AA	45 W		350 pF
INFINEON IPLK80R900P7ATMA1	MOSFET (Metal Oxide)	PG-TDSON-8				Surface Mount	800 V						20 V		8-PowerTDFN
INFINEON IPD80R1K4P7ATMA1	MOSFET (Metal Oxide)	PG-TO252-2	10 V		4 A	Surface Mount	800 V	150 °C	-55 °C	1.4 Ohm	N-Channel	10 nC	20 V	250 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	32 W				3.5 V
INFINEON IPB60R080P7ATMA1	MOSFET (Metal Oxide)		10 V	4 V	37 A	Surface Mount	600 V	150 °C	-55 °C		N-Channel	51 nC	20 V	2180 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	129 W	80 mOhm
INFINEON IPN60R360P7SATMA1	MOSFET (Metal Oxide)	PG-SOT223	10 V	4 V	9 A	Surface Mount	600 V	150 °C	-40 °C	360 mOhm	N-Channel		20 V		TO-261-4 TO-261AA	7 W		555 pF	13 nC
INFINEON IPZA60R099P7XKSA1	MOSFET (Metal Oxide)	PG-TO247-4	10 V	4 V	31 A	Through Hole	600 V	150 °C	-55 °C	99 mOhm	N-Channel	45 nC	20 V	1952 pF	TO-247-4	117 W