Specification	IPL60R185P7AUMA1

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1081 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	4-PowerTSFN
Power Dissipation (Max)	81 W
Rds On (Max) @ Id, Vgs [Max]	185 mOhm
Supplier Device Package	PG-VSON-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

CoolMOS P7 Series

Part	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]
INFINEON IPAN80R360P7XKSA1	MOSFET (Metal Oxide)	PG-TO220-FP	10 V	3.5 V	13 A	Through Hole	800 V	150 °C	-55 °C	360 mOhm	N-Channel	30 nC	20 V	930 pF	TO-220-3 Full Pack
INFINEON IPL60R185P7AUMA1	MOSFET (Metal Oxide)	PG-VSON-4	10 V	4 V	19 A	Surface Mount	600 V	150 °C	-40 °C		N-Channel	25 nC	20 V		4-PowerTSFN	81 W	185 mOhm	1081 pF
INFINEON IPP60R360P7XKSA1	MOSFET (Metal Oxide)	PG-TO220-3	10 V	4 V	9 A	Through Hole	650 V	150 °C	-55 °C	360 mOhm	N-Channel		20 V		TO-220-3	41 W		555 pF	13 nC
INFINEON IPA80R1K4P7XKSA1	MOSFET (Metal Oxide)		10 V		4 A	Through Hole	800 V	150 °C	-55 °C	1.4 Ohm	N-Channel	10 nC	20 V	250 pF	TO-220-3 Full Pack	24 W				3.5 V
INFINEON IPU80R900P7AKMA1	MOSFET (Metal Oxide)	PG-TO251-3	10 V	3.5 V	6 A	Through Hole	800 V	150 °C	-55 °C	900 mOhm	N-Channel	15 nC	20 V		IPAK TO-251-3 Short Leads TO-251AA	45 W		350 pF
INFINEON IPLK80R900P7ATMA1	MOSFET (Metal Oxide)	PG-TDSON-8				Surface Mount	800 V						20 V		8-PowerTDFN
INFINEON IPD80R1K4P7ATMA1	MOSFET (Metal Oxide)	PG-TO252-2	10 V		4 A	Surface Mount	800 V	150 °C	-55 °C	1.4 Ohm	N-Channel	10 nC	20 V	250 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	32 W				3.5 V
INFINEON IPB60R080P7ATMA1	MOSFET (Metal Oxide)		10 V	4 V	37 A	Surface Mount	600 V	150 °C	-55 °C		N-Channel	51 nC	20 V	2180 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	129 W	80 mOhm
INFINEON IPN60R360P7SATMA1	MOSFET (Metal Oxide)	PG-SOT223	10 V	4 V	9 A	Surface Mount	600 V	150 °C	-40 °C	360 mOhm	N-Channel		20 V		TO-261-4 TO-261AA	7 W		555 pF	13 nC
INFINEON IPZA60R099P7XKSA1	MOSFET (Metal Oxide)	PG-TO247-4	10 V	4 V	31 A	Through Hole	600 V	150 °C	-55 °C	99 mOhm	N-Channel	45 nC	20 V	1952 pF	TO-247-4	117 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.19
		10	$ 2.08
		100	$ 1.44
		500	$ 1.17
		1000	$ 1.08
	Digi-Reel®	1	$ 3.19
		10	$ 2.08
		100	$ 1.44
		500	$ 1.17
		1000	$ 1.08
	N/A	4029	$ 2.99
	Tape & Reel (TR)	3000	$ 1.03
Mouser	N/A	1	$ 2.89
		10	$ 1.94
		100	$ 1.36
		500	$ 1.07
		1000	$ 0.99
		3000	$ 0.96
		9000	$ 0.96
Newark	Each (Supplied on Cut Tape)	1	$ 2.95
		10	$ 2.04
		25	$ 1.84
		50	$ 1.63
		100	$ 1.44
		250	$ 1.39
		500	$ 1.16
		1000	$ 1.08

Description

General part information

CoolMOS P7 Series

The600V CoolMOS™ P7is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.