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Technical Specifications
Parameters and characteristics for this part
| Specification | IPN60R360P7SATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 555 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 7 W |
| Rds On (Max) @ Id, Vgs | 360 mOhm |
| Supplier Device Package | PG-SOT223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
| Part | Technology | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | MOSFET (Metal Oxide) | PG-TO220-FP | 10 V | 3.5 V | 13 A | Through Hole | 800 V | 150 °C | -55 °C | 360 mOhm | N-Channel | 30 nC | 20 V | 930 pF | TO-220-3 Full Pack | |||||
INFINEON | MOSFET (Metal Oxide) | PG-VSON-4 | 10 V | 4 V | 19 A | Surface Mount | 600 V | 150 °C | -40 °C | N-Channel | 25 nC | 20 V | 4-PowerTSFN | 81 W | 185 mOhm | 1081 pF | ||||
INFINEON | MOSFET (Metal Oxide) | PG-TO220-3 | 10 V | 4 V | 9 A | Through Hole | 650 V | 150 °C | -55 °C | 360 mOhm | N-Channel | 20 V | TO-220-3 | 41 W | 555 pF | 13 nC | ||||
INFINEON | MOSFET (Metal Oxide) | 10 V | 4 A | Through Hole | 800 V | 150 °C | -55 °C | 1.4 Ohm | N-Channel | 10 nC | 20 V | 250 pF | TO-220-3 Full Pack | 24 W | 3.5 V | |||||
INFINEON | MOSFET (Metal Oxide) | PG-TO251-3 | 10 V | 3.5 V | 6 A | Through Hole | 800 V | 150 °C | -55 °C | 900 mOhm | N-Channel | 15 nC | 20 V | IPAK TO-251-3 Short Leads TO-251AA | 45 W | 350 pF | ||||
INFINEON | MOSFET (Metal Oxide) | PG-TDSON-8 | Surface Mount | 800 V | 20 V | 8-PowerTDFN | ||||||||||||||
INFINEON | MOSFET (Metal Oxide) | PG-TO252-2 | 10 V | 4 A | Surface Mount | 800 V | 150 °C | -55 °C | 1.4 Ohm | N-Channel | 10 nC | 20 V | 250 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 32 W | 3.5 V | ||||
INFINEON | MOSFET (Metal Oxide) | 10 V | 4 V | 37 A | Surface Mount | 600 V | 150 °C | -55 °C | N-Channel | 51 nC | 20 V | 2180 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 129 W | 80 mOhm | |||||
INFINEON | MOSFET (Metal Oxide) | PG-SOT223 | 10 V | 4 V | 9 A | Surface Mount | 600 V | 150 °C | -40 °C | 360 mOhm | N-Channel | 20 V | TO-261-4 TO-261AA | 7 W | 555 pF | 13 nC | ||||
INFINEON | MOSFET (Metal Oxide) | PG-TO247-4 | 10 V | 4 V | 31 A | Through Hole | 600 V | 150 °C | -55 °C | 99 mOhm | N-Channel | 45 nC | 20 V | 1952 pF | TO-247-4 | 117 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
CoolMOS P7 Series
N-Channel 600 V 9A (Tc) 7W (Tc) Surface Mount PG-SOT223
Documents
Technical documentation and resources