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IPA80R1K4P7XKSA1

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INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; TO-220 FULLPAK PACKAGE; 1400 MOHM; PRICE/PERFORMANCE

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DocumentsDatasheet Technical Data Sheet EN +7

Discrete Semiconductor Products

IPA80R1K4P7XKSA1

Active

INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 800 V ; TO-220 FULLPAK PACKAGE; 1400 MOHM; PRICE/PERFORMANCE

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DocumentsDatasheet Technical Data Sheet EN +7

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPA80R1K4P7XKSA1

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	24 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

CoolMOS P7 Series

Part	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]
INFINEON IPAN80R360P7XKSA1	MOSFET (Metal Oxide)	PG-TO220-FP	10 V	3.5 V	13 A	Through Hole	800 V	150 °C	-55 °C	360 mOhm	N-Channel	30 nC	20 V	930 pF	TO-220-3 Full Pack
INFINEON IPL60R185P7AUMA1	MOSFET (Metal Oxide)	PG-VSON-4	10 V	4 V	19 A	Surface Mount	600 V	150 °C	-40 °C		N-Channel	25 nC	20 V		4-PowerTSFN	81 W	185 mOhm	1081 pF
INFINEON IPP60R360P7XKSA1	MOSFET (Metal Oxide)	PG-TO220-3	10 V	4 V	9 A	Through Hole	650 V	150 °C	-55 °C	360 mOhm	N-Channel		20 V		TO-220-3	41 W		555 pF	13 nC
INFINEON IPA80R1K4P7XKSA1	MOSFET (Metal Oxide)		10 V		4 A	Through Hole	800 V	150 °C	-55 °C	1.4 Ohm	N-Channel	10 nC	20 V	250 pF	TO-220-3 Full Pack	24 W				3.5 V
INFINEON IPU80R900P7AKMA1	MOSFET (Metal Oxide)	PG-TO251-3	10 V	3.5 V	6 A	Through Hole	800 V	150 °C	-55 °C	900 mOhm	N-Channel	15 nC	20 V		IPAK TO-251-3 Short Leads TO-251AA	45 W		350 pF
INFINEON IPLK80R900P7ATMA1	MOSFET (Metal Oxide)	PG-TDSON-8				Surface Mount	800 V						20 V		8-PowerTDFN
INFINEON IPD80R1K4P7ATMA1	MOSFET (Metal Oxide)	PG-TO252-2	10 V		4 A	Surface Mount	800 V	150 °C	-55 °C	1.4 Ohm	N-Channel	10 nC	20 V	250 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	32 W				3.5 V
INFINEON IPB60R080P7ATMA1	MOSFET (Metal Oxide)		10 V	4 V	37 A	Surface Mount	600 V	150 °C	-55 °C		N-Channel	51 nC	20 V	2180 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	129 W	80 mOhm
INFINEON IPN60R360P7SATMA1	MOSFET (Metal Oxide)	PG-SOT223	10 V	4 V	9 A	Surface Mount	600 V	150 °C	-40 °C	360 mOhm	N-Channel		20 V		TO-261-4 TO-261AA	7 W		555 pF	13 nC
INFINEON IPZA60R099P7XKSA1	MOSFET (Metal Oxide)	PG-TO247-4	10 V	4 V	31 A	Through Hole	600 V	150 °C	-55 °C	99 mOhm	N-Channel	45 nC	20 V	1952 pF	TO-247-4	117 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	330	$ 1.69
	Tube	1	$ 1.33
		50	$ 1.06
		100	$ 0.84
		500	$ 0.71
		1000	$ 0.58
		2000	$ 0.55
		5000	$ 0.52
		10000	$ 0.50
Mouser	N/A	1	$ 1.76
		10	$ 0.83
		100	$ 0.77
		500	$ 0.61
		1000	$ 0.57
		2500	$ 0.51
		5000	$ 0.47
Newark	Each	1	$ 2.06
		10	$ 1.14
		100	$ 1.04
		500	$ 0.88
		1000	$ 0.84
		2500	$ 0.78
		10000	$ 0.74

Description

General part information

CoolMOS P7 Series

800V CoolMOS™ P7superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on)products. Overall, it helps customers save BOM cost and reduce assembly effort.

Documents

Technical documentation and resources

Datasheet

IPA80R1K4P7XKSA1

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IPA80R1K4P7XKSA1

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Technical Specifications

CoolMOS P7 Series

Pricing

Description

CoolMOS P7 Series

Documents

Datasheet

Technical Data Sheet EN

MOSFET CoolMOS™ best-in-class RDSon per package products

MOSFET some key facts about avalanche

Infineon-MA005621176-MaterialContentSheet-v01_00-EN

MOSFET CoolMOS™ P7 800V

IPA80R1K4P7

MOSFET CoolMOS™ benefits in hard and soft switching SMPS topologies

FIT Report - IPA80R1K4P7

CoolMOS P7 Series