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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

IPP60R360P7XKSA1

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INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 360 MOHM; PRICE/PERFORMANCE

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ONSEMI ISL9V3040P3
Discrete Semiconductor Products

IPP60R360P7XKSA1

Active
INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 360 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP60R360P7XKSA1
Current - Continuous Drain (Id) @ 25°C9 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]555 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)41 W
Rds On (Max) @ Id, Vgs360 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 1.84
10$ 1.01
100$ 0.91
DigikeyN/A 287$ 2.02
Tube 1$ 2.23
10$ 1.43
100$ 0.97
500$ 0.78
1000$ 0.71
2000$ 0.66
5000$ 0.63
MouserN/A 1$ 1.87
10$ 1.06
100$ 0.97
500$ 0.77
1000$ 0.66
5000$ 0.63
NewarkEach 1$ 2.21
10$ 1.40
100$ 1.28
500$ 1.08
1000$ 0.97
2500$ 0.95
10000$ 0.94

Description

General part information

CoolMOS P7 Series

The600V CoolMOS™ P7is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.