Discrete Semiconductor Products

XP65SL190DI

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YAGEO

MOSFETS N-CH 650V 20A TO-220CFM

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DocumentsXP65SL190DI | Datasheet

Discrete Semiconductor Products

XP65SL190DI

Active

YAGEO

MOSFETS N-CH 650V 20A TO-220CFM

Deep-Dive with AI

DocumentsXP65SL190DI | Datasheet

Specifications Series Pricing CAD Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	XP65SL190DI

Current - Continuous Drain (Id) (Tc)	20 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	92.8 nC
Input Capacitance (Ciss) (Max)	3312 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220CFM
Power Dissipation (Max)	34.7 W, 1.92 W
Rds On (Max)	190 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	5 V

XP Series

Part	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	FET Type	Vgs(th) (Max)	Power Dissipation (Max)	Technology	Gate Charge (Max)	Package Name	Package Length	Package Width	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Power - Max (Ta)	Configuration
YAGEO XP65SL190DI	20 A	20 V	10 V	TO-220-3 Full Pack	190 mOhm	650 V	3312 pF	-55 °C	150 °C	Through Hole	N-Channel	5 V	1.92 W 34.7 W	MOSFET (Metal Oxide)	92.8 nC	TO-220CFM
YAGEO XP10NA8R4H	66 A	20 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	8.4 mOhm	100 V	3248 pF	-55 °C	150 °C	Surface Mount	N-Channel	4 V	2 W 69 W	MOSFET (Metal Oxide)	67.2 nC	TO-252
YAGEO XP4060CMT		20 V		8-PowerLDFN	2.25 mOhm	30 V	3200 pF	-55 °C	150 °C	Surface Mount	N-Channel	3 V	5 W 52 W	MOSFET (Metal Oxide)	52.8 nC	PMPAK®	5 mm	6 mm	10 V	4.5 V	37 A
YAGEO XP3N2R8AMT	60 A	20 V		8-PowerLDFN	2.8 mOhm	30 V	4080 pF	-55 °C	150 °C	Surface Mount	N-Channel	3 V	5 W 50 W	MOSFET (Metal Oxide)	40 nC	PMPAK®	5 mm	6 mm	10 V	4.5 V	32.8 A
YAGEO XP4N2R1MT	170 A	20 V	10 V	8-PowerLDFN	2.1 mOhm	40 V	9056 pF	-55 °C	150 °C	Surface Mount	N-Channel	5 V	5 W 104 W	MOSFET (Metal Oxide)	154 nC	PMPAK®	5 mm	6 mm			37.5 A
YAGEO XP60AN750IN	10 A	30 V	10 V	TO-220-3 Full Pack	750 mOhm	600 V	2688 pF	-55 °C	150 °C	Through Hole	N-Channel	4 V	1.92 W 36.7 W	MOSFET (Metal Oxide)	59.2 nC	TO-220CFM
YAGEO XP3P010H	58 A	20 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	10 mOhm	30 V	5840 pF	-55 °C	150 °C	Surface Mount	P-Channel	3 V	2 W 50 W	MOSFET (Metal Oxide)	57.6 nC	TO-252			10 V	4.5 V
YAGEO XP2530AGY				SOT-23-6	72 mOhm	30 V	260 pF 320 pF	-55 °C	150 °C	Surface Mount		3 V		MOSFET (Metal Oxide)	4.5 nC	SOT-26					3.3 A	1.136 W	N P-Channel
YAGEO XP3R303GMT-L	105 A	20 V		8-PowerLDFN	3.3 mOhm	30 V	2240 pF	-55 °C	150 °C	Surface Mount	N-Channel	3 V	5 W 56.8 W	MOSFET (Metal Oxide)	21 nC	PMPAK®	5 mm	6 mm	10 V	4.5 V	31 A
YAGEO XP4N2R5MT	125 A	20 V	10 V	8-PowerLDFN	2.55 mOhm	40 V	6080 pF	-55 °C	150 °C	Surface Mount	N-Channel	4 V	5 W 69.4 W	MOSFET (Metal Oxide)	112 nC	PMPAK®	5 mm	6 mm			33.8 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	955	$ 3.98	1m+
Mouser	N/A	1	$ 2.99	1m+
		10	$ 1.89
		100	$ 1.73
		500	$ 1.63
		1000	$ 1.53
		2500	$ 1.50
		5000	$ 1.47

CAD

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Description

General part information

XP Series

MOSFETS N-CH 650V 20A TO-220CFM

Documents

Technical documentation and resources

XP65SL190DI | Datasheet

Datasheet