Discrete Semiconductor Products

XP10NA8R4H

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YAGEO

MOSFET N CH 100V 66A TO-252

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DocumentsXP10NA8R4H | Datasheet

Discrete Semiconductor Products

XP10NA8R4H

Active

YAGEO

MOSFET N CH 100V 66A TO-252

Deep-Dive with AI

DocumentsXP10NA8R4H | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	XP10NA8R4H

Current - Continuous Drain (Id) @ 25°C	66 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	67.2 nC
Input Capacitance (Ciss) (Max) @ Vds	3248 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	2 W, 69 W
Rds On (Max) @ Id, Vgs	8.4 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

XP Series

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Power - Max [Max]	Configuration
YAGEO XP65SL190DI	20 A	20 V	10 V	TO-220-3 Full Pack	190 mOhm	650 V	3312 pF	150 °C	-55 °C	Through Hole	N-Channel	5 V	1.92 W	34.7 W	MOSFET (Metal Oxide)	92.8 nC	TO-220CFM
YAGEO XP10NA8R4H	66 A	20 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	8.4 mOhm	100 V	3248 pF	150 °C	-55 °C	Surface Mount	N-Channel	4 V			MOSFET (Metal Oxide)	67.2 nC	TO-252	2 W 69 W
YAGEO XP4060CMT	37 A 100 A	20 V	4.5 V 10 V	8-PowerLDFN	2.25 mOhm	30 V	3200 pF	150 °C	-55 °C	Surface Mount	N-Channel	3 V			MOSFET (Metal Oxide)	52.8 nC	PMPAK® 5 x 6	5 W 52 W
YAGEO XP3N2R8AMT	32.8 A 60 A	20 V	4.5 V 10 V	8-PowerLDFN	2.8 mOhm	30 V		150 °C	-55 °C	Surface Mount	N-Channel	3 V			MOSFET (Metal Oxide)		PMPAK® 5 x 6	5 W 50 W	4080 pF	40 nC
YAGEO XP4N2R1MT	37.5 A 170 A	20 V	10 V	8-PowerLDFN	2.1 mOhm	40 V	9056 pF	150 °C	-55 °C	Surface Mount	N-Channel	5 V			MOSFET (Metal Oxide)	154 nC	PMPAK® 5 x 6
YAGEO XP60AN750IN	10 A	30 V	10 V	TO-220-3 Full Pack	750 mOhm	600 V	2688 pF	150 °C	-55 °C	Through Hole	N-Channel	4 V			MOSFET (Metal Oxide)	59.2 nC	TO-220CFM				1.92 W 36.7 W
YAGEO XP3P010H	58 A	20 V	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 mOhm	30 V	5840 pF	150 °C	-55 °C	Surface Mount	P-Channel	3 V			MOSFET (Metal Oxide)	57.6 nC	TO-252	2 W 50 W
YAGEO XP2530AGY	2.3 A 3.3 A			SOT-23-6	72 mOhm 150 mOhm	30 V	260 pF 320 pF	150 °C	-55 °C	Surface Mount		3 V			MOSFET (Metal Oxide)		SOT-26			4.5 nC		1.136 W	N and P-Channel
YAGEO XP3R303GMT-L	31 A 105 A	20 V	4.5 V 10 V	8-PowerLDFN	3.3 mOhm	30 V	2240 pF	150 °C	-55 °C	Surface Mount	N-Channel	3 V			MOSFET (Metal Oxide)		PMPAK® 5 x 6	5 W 56.8 W		21 nC
YAGEO XP4N2R5MT	33.8 A 125 A	20 V	10 V	8-PowerLDFN	2.55 mOhm	40 V		150 °C	-55 °C	Surface Mount	N-Channel	4 V			MOSFET (Metal Oxide)	112 nC	PMPAK® 5 x 6	5 W 69.4 W	6080 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.43
Mouser	N/A	3000	$ 0.44
		9000	$ 0.42
		24000	$ 0.42

Description

General part information

XP Series

MOSFET N CH 100V 66A TO-252

Documents

Technical documentation and resources

XP10NA8R4H | Datasheet

Datasheet