Discrete Semiconductor Products

XP10NA8R4H

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YAGEO

MOSFET N CH 100V 66A TO-252

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DocumentsXP10NA8R4H | Datasheet

Discrete Semiconductor Products

XP10NA8R4H

Active

YAGEO

MOSFET N CH 100V 66A TO-252

Deep-Dive with AI

DocumentsXP10NA8R4H | Datasheet

Specifications Series Pricing CAD Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	XP10NA8R4H

Current - Continuous Drain (Id) (Tc)	66 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	67.2 nC
Input Capacitance (Ciss) (Max)	3248 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252
Power Dissipation (Max)	2 W, 69 W
Rds On (Max)	8.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

XP Series

Part	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	FET Type	Vgs(th) (Max)	Power Dissipation (Max)	Technology	Gate Charge (Max)	Package Name	Package Length	Package Width	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Power - Max (Ta)	Configuration
YAGEO XP65SL190DI	20 A	20 V	10 V	TO-220-3 Full Pack	190 mOhm	650 V	3312 pF	-55 °C	150 °C	Through Hole	N-Channel	5 V	1.92 W 34.7 W	MOSFET (Metal Oxide)	92.8 nC	TO-220CFM
YAGEO XP10NA8R4H	66 A	20 V	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	8.4 mOhm	100 V	3248 pF	-55 °C	150 °C	Surface Mount	N-Channel	4 V	2 W 69 W	MOSFET (Metal Oxide)	67.2 nC	TO-252
YAGEO XP4060CMT		20 V		8-PowerLDFN	2.25 mOhm	30 V	3200 pF	-55 °C	150 °C	Surface Mount	N-Channel	3 V	5 W 52 W	MOSFET (Metal Oxide)	52.8 nC	PMPAK®	5 mm	6 mm	10 V	4.5 V	37 A
YAGEO XP3N2R8AMT	60 A	20 V		8-PowerLDFN	2.8 mOhm	30 V	4080 pF	-55 °C	150 °C	Surface Mount	N-Channel	3 V	5 W 50 W	MOSFET (Metal Oxide)	40 nC	PMPAK®	5 mm	6 mm	10 V	4.5 V	32.8 A
YAGEO XP4N2R1MT	170 A	20 V	10 V	8-PowerLDFN	2.1 mOhm	40 V	9056 pF	-55 °C	150 °C	Surface Mount	N-Channel	5 V	5 W 104 W	MOSFET (Metal Oxide)	154 nC	PMPAK®	5 mm	6 mm			37.5 A
YAGEO XP60AN750IN	10 A	30 V	10 V	TO-220-3 Full Pack	750 mOhm	600 V	2688 pF	-55 °C	150 °C	Through Hole	N-Channel	4 V	1.92 W 36.7 W	MOSFET (Metal Oxide)	59.2 nC	TO-220CFM
YAGEO XP3P010H	58 A	20 V		DPAK (2 Leads + Tab) SC-63 TO-252-3	10 mOhm	30 V	5840 pF	-55 °C	150 °C	Surface Mount	P-Channel	3 V	2 W 50 W	MOSFET (Metal Oxide)	57.6 nC	TO-252			10 V	4.5 V
YAGEO XP2530AGY				SOT-23-6	72 mOhm	30 V	260 pF 320 pF	-55 °C	150 °C	Surface Mount		3 V		MOSFET (Metal Oxide)	4.5 nC	SOT-26					3.3 A	1.136 W	N P-Channel
YAGEO XP3R303GMT-L	105 A	20 V		8-PowerLDFN	3.3 mOhm	30 V	2240 pF	-55 °C	150 °C	Surface Mount	N-Channel	3 V	5 W 56.8 W	MOSFET (Metal Oxide)	21 nC	PMPAK®	5 mm	6 mm	10 V	4.5 V	31 A
YAGEO XP4N2R5MT	125 A	20 V	10 V	8-PowerLDFN	2.55 mOhm	40 V	6080 pF	-55 °C	150 °C	Surface Mount	N-Channel	4 V	5 W 69.4 W	MOSFET (Metal Oxide)	112 nC	PMPAK®	5 mm	6 mm			33.8 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.43	1m+
Mouser	N/A	3000	$ 0.44	1m+
		9000	$ 0.42
		24000	$ 0.42

CAD

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Description

General part information

XP Series

MOSFET N CH 100V 66A TO-252

Documents

Technical documentation and resources

XP10NA8R4H | Datasheet

Datasheet