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XP4N2R1MT
Discrete Semiconductor Products

XP4N2R1MT

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YAGEO

MOSFETS N-CH 40V 37.5 A PMPAK-5X6

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XP4N2R1MT
Discrete Semiconductor Products

XP4N2R1MT

Active
YAGEO

MOSFETS N-CH 40V 37.5 A PMPAK-5X6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationXP4N2R1MT
Current - Continuous Drain (Id) (Ta)37.5 A
Current - Continuous Drain (Id) (Tc)170 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)154 nC
Input Capacitance (Ciss) (Max)9056 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerLDFN
Package Length5 mm
Package NamePMPAK®
Package Width6 mm
Power Dissipation (Max)5 W, 104 W
Rds On (Max)2.1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 995$ 1.791m+
MouserN/A 1$ 1.721m+
10$ 1.17
100$ 0.81
500$ 0.65
1000$ 0.64
3000$ 0.57
6000$ 0.52

CAD

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Description

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XP Series

MOSFETS N-CH 40V 37.5 A PMPAK-5X6

Documents

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