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XP3R303GMT-L
Discrete Semiconductor Products

XP3R303GMT-L

Obsolete
YAGEO

MOSFET N-CH 30V 31A 105A PMPAK

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Search across all available documentation for this part.

DocumentsXP3R303GMT-L | Datasheet
XP3R303GMT-L
Discrete Semiconductor Products

XP3R303GMT-L

Obsolete
YAGEO

MOSFET N-CH 30V 31A 105A PMPAK

Deep-Dive with AI

DocumentsXP3R303GMT-L | Datasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationXP3R303GMT-L
Current - Continuous Drain (Id) @ 25°C105 A, 31 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]21 nC
Input Capacitance (Ciss) (Max) @ Vds2240 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerLDFN
Power Dissipation (Max)56.8 W, 5 W
Rds On (Max) @ Id, Vgs3.3 mOhm
Supplier Device PackagePMPAK® 5 x 6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

XP Series

PartCurrent - Continuous Drain (Id) @ 25°CVgs (Max)Drive Voltage (Max Rds On, Min Rds On)Package / CaseRds On (Max) @ Id, VgsDrain to Source Voltage (Vdss)Input Capacitance (Ciss) (Max) @ VdsOperating Temperature [Max]Operating Temperature [Min]Mounting TypeFET TypeVgs(th) (Max) @ IdPower Dissipation (Max)Power Dissipation (Max)TechnologyGate Charge (Qg) (Max) @ VgsSupplier Device PackagePower Dissipation (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]Gate Charge (Qg) (Max) @ Vgs [Max]Power Dissipation (Max) [Max]Power - Max [Max]Configuration
XP65SL190DI
YAGEO
XP65SL190DI
20 A
20 V
10 V
TO-220-3 Full Pack
190 mOhm
650 V
3312 pF
150 °C
-55 °C
Through Hole
N-Channel
5 V
1.92 W
34.7 W
MOSFET (Metal Oxide)
92.8 nC
TO-220CFM
XP10NA8R4H
YAGEO
XP10NA8R4H
66 A
20 V
10 V
DPAK (2 Leads + Tab)
SC-63
TO-252-3
8.4 mOhm
100 V
3248 pF
150 °C
-55 °C
Surface Mount
N-Channel
4 V
MOSFET (Metal Oxide)
67.2 nC
TO-252
2 W
69 W
XP4060CMT
YAGEO
XP4060CMT
37 A
100 A
20 V
4.5 V
10 V
8-PowerLDFN
2.25 mOhm
30 V
3200 pF
150 °C
-55 °C
Surface Mount
N-Channel
3 V
MOSFET (Metal Oxide)
52.8 nC
PMPAK® 5 x 6
5 W
52 W
XP3N2R8AMT
YAGEO
XP3N2R8AMT
32.8 A
60 A
20 V
4.5 V
10 V
8-PowerLDFN
2.8 mOhm
30 V
150 °C
-55 °C
Surface Mount
N-Channel
3 V
MOSFET (Metal Oxide)
PMPAK® 5 x 6
5 W
50 W
4080 pF
40 nC
XP4N2R1MT
YAGEO
XP4N2R1MT
37.5 A
170 A
20 V
10 V
8-PowerLDFN
2.1 mOhm
40 V
9056 pF
150 °C
-55 °C
Surface Mount
N-Channel
5 V
MOSFET (Metal Oxide)
154 nC
PMPAK® 5 x 6
XP60AN750IN
YAGEO
XP60AN750IN
10 A
30 V
10 V
TO-220-3 Full Pack
750 mOhm
600 V
2688 pF
150 °C
-55 °C
Through Hole
N-Channel
4 V
MOSFET (Metal Oxide)
59.2 nC
TO-220CFM
1.92 W
36.7 W
XP3P010H
YAGEO
XP3P010H
58 A
20 V
4.5 V
10 V
DPAK (2 Leads + Tab)
SC-63
TO-252-3
10 mOhm
30 V
5840 pF
150 °C
-55 °C
Surface Mount
P-Channel
3 V
MOSFET (Metal Oxide)
57.6 nC
TO-252
2 W
50 W
YAGEO
XP2530AGY
2.3 A
3.3 A
SOT-23-6
72 mOhm
150 mOhm
30 V
260 pF
320 pF
150 °C
-55 °C
Surface Mount
3 V
MOSFET (Metal Oxide)
SOT-26
4.5 nC
1.136 W
N and P-Channel
XP3R303GMT-L
YAGEO
XP3R303GMT-L
31 A
105 A
20 V
4.5 V
10 V
8-PowerLDFN
3.3 mOhm
30 V
2240 pF
150 °C
-55 °C
Surface Mount
N-Channel
3 V
MOSFET (Metal Oxide)
PMPAK® 5 x 6
5 W
56.8 W
21 nC
XP4N2R5MT
YAGEO
XP4N2R5MT
33.8 A
125 A
20 V
10 V
8-PowerLDFN
2.55 mOhm
40 V
150 °C
-55 °C
Surface Mount
N-Channel
4 V
MOSFET (Metal Oxide)
112 nC
PMPAK® 5 x 6
5 W
69.4 W
6080 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00
MouserN/A 1$ 0.72
10$ 0.59
100$ 0.40
500$ 0.31
1000$ 0.28
3000$ 0.27
6000$ 0.21

Description

General part information

XP Series

MOSFET N-CH 30V 31A 105A PMPAK

Documents

Technical documentation and resources

XP3R303GMT-L | Datasheet

Datasheet