Zenode.ai Logo
XP3R303GMT-L
Discrete Semiconductor Products

XP3R303GMT-L

Obsolete
YAGEO

MOSFET N-CH 30V 31A 105A PMPAK

Deep-Dive with AI

Search across all available documentation for this part.

XP3R303GMT-L
Discrete Semiconductor Products

XP3R303GMT-L

Obsolete
YAGEO

MOSFET N-CH 30V 31A 105A PMPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationXP3R303GMT-L
Current - Continuous Drain (Id) (Ta)31 A
Current - Continuous Drain (Id) (Tc)105 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)21 nC
Input Capacitance (Ciss) (Max)2240 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerLDFN
Package Length5 mm
Package NamePMPAK®
Package Width6 mm
Power Dissipation (Max)5 W, 56.8 W
Rds On (Max)3.3 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+
MouserN/A 1$ 0.721m+
10$ 0.59
100$ 0.40
500$ 0.31
1000$ 0.28
3000$ 0.27
6000$ 0.21

CAD

3D models and CAD resources for this part

Description

General part information

XP Series

MOSFET N-CH 30V 31A 105A PMPAK

Documents

Technical documentation and resources