XP Series
Manufacturer: YAGEO
MOSFETS N-CH 650V 20A TO-220CFM
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | FET Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Power Dissipation (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Power - Max [Max] | Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
YAGEO | 20 A | 20 V | 10 V | TO-220-3 Full Pack | 190 mOhm | 650 V | 3312 pF | 150 °C | -55 °C | Through Hole | N-Channel | 5 V | 1.92 W | 34.7 W | MOSFET (Metal Oxide) | 92.8 nC | TO-220CFM | ||||||
YAGEO | 66 A | 20 V | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 8.4 mOhm | 100 V | 3248 pF | 150 °C | -55 °C | Surface Mount | N-Channel | 4 V | MOSFET (Metal Oxide) | 67.2 nC | TO-252 | 2 W 69 W | |||||||
YAGEO | 37 A 100 A | 20 V | 4.5 V 10 V | 8-PowerLDFN | 2.25 mOhm | 30 V | 3200 pF | 150 °C | -55 °C | Surface Mount | N-Channel | 3 V | MOSFET (Metal Oxide) | 52.8 nC | PMPAK® 5 x 6 | 5 W 52 W | |||||||
YAGEO | 32.8 A 60 A | 20 V | 4.5 V 10 V | 8-PowerLDFN | 2.8 mOhm | 30 V | 150 °C | -55 °C | Surface Mount | N-Channel | 3 V | MOSFET (Metal Oxide) | PMPAK® 5 x 6 | 5 W 50 W | 4080 pF | 40 nC | |||||||
YAGEO | 37.5 A 170 A | 20 V | 10 V | 8-PowerLDFN | 2.1 mOhm | 40 V | 9056 pF | 150 °C | -55 °C | Surface Mount | N-Channel | 5 V | MOSFET (Metal Oxide) | 154 nC | PMPAK® 5 x 6 | ||||||||
YAGEO | 10 A | 30 V | 10 V | TO-220-3 Full Pack | 750 mOhm | 600 V | 2688 pF | 150 °C | -55 °C | Through Hole | N-Channel | 4 V | MOSFET (Metal Oxide) | 59.2 nC | TO-220CFM | 1.92 W 36.7 W | |||||||
YAGEO | 58 A | 20 V | 4.5 V 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 10 mOhm | 30 V | 5840 pF | 150 °C | -55 °C | Surface Mount | P-Channel | 3 V | MOSFET (Metal Oxide) | 57.6 nC | TO-252 | 2 W 50 W | |||||||
YAGEO | 2.3 A 3.3 A | SOT-23-6 | 72 mOhm 150 mOhm | 30 V | 260 pF 320 pF | 150 °C | -55 °C | Surface Mount | 3 V | MOSFET (Metal Oxide) | SOT-26 | 4.5 nC | 1.136 W | N and P-Channel | |||||||||
YAGEO | 31 A 105 A | 20 V | 4.5 V 10 V | 8-PowerLDFN | 3.3 mOhm | 30 V | 2240 pF | 150 °C | -55 °C | Surface Mount | N-Channel | 3 V | MOSFET (Metal Oxide) | PMPAK® 5 x 6 | 5 W 56.8 W | 21 nC | |||||||
YAGEO | 33.8 A 125 A | 20 V | 10 V | 8-PowerLDFN | 2.55 mOhm | 40 V | 150 °C | -55 °C | Surface Mount | N-Channel | 4 V | MOSFET (Metal Oxide) | 112 nC | PMPAK® 5 x 6 | 5 W 69.4 W | 6080 pF |