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XP4N2R5MT
Discrete Semiconductor Products

XP4N2R5MT

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YAGEO

MOSFETS N-CH 40V 33.8 A PMPAK-5X6

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XP4N2R5MT
Discrete Semiconductor Products

XP4N2R5MT

Active
YAGEO

MOSFETS N-CH 40V 33.8 A PMPAK-5X6

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationXP4N2R5MT
Current - Continuous Drain (Id) (Ta)33.8 A
Current - Continuous Drain (Id) (Tc)125 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)112 nC
Input Capacitance (Ciss) (Max)6080 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerLDFN
Package Length5 mm
Package NamePMPAK®
Package Width6 mm
Power Dissipation (Max)69.4 W, 5 W
Rds On (Max)2.55 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 1000$ 1.831m+
MouserN/A 1$ 1.751m+
10$ 1.20
100$ 0.82
500$ 0.66
1000$ 0.61
3000$ 0.59
6000$ 0.54

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Description

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XP Series

MOSFETS N-CH 40V 33.8 A PMPAK-5X6

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