Texas Instruments

The TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A into highly capacitive loads. High switching speeds (trand tf= 14 ns typ) are obtained with the use of BiCMOS outputs. Typical threshold switching voltages are 2/3 and 1/3 of VCC. The design inherently minimizes shoot-through current. A regulator is provided on TPS2816 through TPS2819 devices to allow operation with supply inputs between 14 V and 40 V. The regulator output can be used to power other circuits, provided power dissipation does not exceed package limitations. If the regulator is not required, VDD(the regulator input) should be connected to VCC. The TPS2816 and TPS2817 input circuits include an active pullup circuit to eliminate the need for an external resistor when using open-collector PWM controllers. The TPS2818 and TPS2819 are identical to the TPS2816 and TPS2817, except that the active pullup circuit is omitted. The TPS2828 and TPS2829 are identical to the TPS2818 and TPS2819, except that the internal voltage regulator is omitted, allowing quiescent current to drop to less than 15 µA when the inputs are high or low. The TPS28xx series devices are available in 5-pin SOT-23 (DBV) packages and operate over an ambient temperature range of -55°C to 125°C. The TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A into highly capacitive loads. High switching speeds (trand tf= 14 ns typ) are obtained with the use of BiCMOS outputs. Typical threshold switching voltages are 2/3 and 1/3 of VCC. The design inherently minimizes shoot-through current. A regulator is provided on TPS2816 through TPS2819 devices to allow operation with supply inputs between 14 V and 40 V. The regulator output can be used to power other circuits, provided power dissipation does not exceed package limitations. If the regulator is not required, VDD(the regulator input) should be connected to VCC. The TPS2816 and TPS2817 input circuits include an active pullup circuit to eliminate the need for an external resistor when using open-collector PWM controllers. The TPS2818 and TPS2819 are identical to the TPS2816 and TPS2817, except that the active pullup circuit is omitted. The TPS2828 and TPS2829 are identical to the TPS2818 and TPS2819, except that the internal voltage regulator is omitted, allowing quiescent current to drop to less than 15 µA when the inputs are high or low. The TPS28xx series devices are available in 5-pin SOT-23 (DBV) packages and operate over an ambient temperature range of -55°C to 125°C.

The TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A into highly capacitive loads. High switching speeds (trand tf= 14 ns typ) are obtained with the use of BiCMOS outputs. Typical threshold switching voltages are two-thirds and one-third of VCC. The design inherently minimizes shoot-through current. A regulator is provided on TPS2816 through TPS2819 devices to allow operation with supply inputs between 14V and 40V. The regulator output can be used to power other circuits, provided power dissipation does not exceed package limitations. If the regulator is not required, VDD(the regulator input) should be connected to VCC. The TPS2816 and TPS2817 input circuits include an active pullup circuit to eliminate the need for an external resistor when using open-collector PWM controllers. The TPS2818 and TPS2819 are identical to the TPS2816 and TPS2817, except that the active pullup circuit is omitted. The TPS2828 and TPS2829 are identical to the TPS2818 and TPS2819, except that the internal voltage regulator is omitted, allowing quiescent current to drop to less than 15 µA when the inputs are high or low. The TPS28xx series devices are available in 5-pin SOT-23 (DBV) packages and operate over an ambient temperature range of –40°C to 125°C. The TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A into highly capacitive loads. High switching speeds (trand tf= 14 ns typ) are obtained with the use of BiCMOS outputs. Typical threshold switching voltages are two-thirds and one-third of VCC. The design inherently minimizes shoot-through current. A regulator is provided on TPS2816 through TPS2819 devices to allow operation with supply inputs between 14V and 40V. The regulator output can be used to power other circuits, provided power dissipation does not exceed package limitations. If the regulator is not required, VDD(the regulator input) should be connected to VCC. The TPS2816 and TPS2817 input circuits include an active pullup circuit to eliminate the need for an external resistor when using open-collector PWM controllers. The TPS2818 and TPS2819 are identical to the TPS2816 and TPS2817, except that the active pullup circuit is omitted. The TPS2828 and TPS2829 are identical to the TPS2818 and TPS2819, except that the internal voltage regulator is omitted, allowing quiescent current to drop to less than 15 µA when the inputs are high or low. The TPS28xx series devices are available in 5-pin SOT-23 (DBV) packages and operate over an ambient temperature range of –40°C to 125°C.

TPS281C30x is a single channel smart high-side switch designed to meet the requirements of industrial control systems. The low RON (30mΩ) minimizes device power dissipation, driving a wide range of output load current up to 6A DC and the 64V DC tolerance improves system robustness. The device integrates protection features such as thermal shut down, output clamp, and current limit. These features improve system robustness during fault events such as short circuit. TPS281C30x implements an adjustable current limiting circuit that improves the reliability of the system by reducing inrush current when driving large capacitive loads and minimizing overload current. In order to drive high inrush current loads such as lamps or fast charging capacitive loads, TPS281C30x implements an inrush current time period with a higher level of allowed current. The device also provides an accurate load current sense that allows for improved load diagnostics such as overload and open-load detection enabling better predictive maintenance. TPS281C30E provides enhanced Electrical Fast Transient (EFT) immunity, where the device will stay off with up to 2.5kV EFT pulse applied at VS or VOUT, 10nF output capacitor and 100pF coupling capacitor between the pulse generator and the output. The EFT level can be further increased if a larger output capacitor is used. The enhanced EFT immunity improves the system’s robustness against undesired coupling in the industrial systems. TPS281C30x is available in a small 14-pin, 4.4mm × 5mm HTSSOP leaded package (version A, B, C, D) with 0.65mm pin pitch and 20-pin, 5mm × 5mm QFN with 0.65mm pin pitch (all versions) minimizing the PCB footprint. TPS281C30x is a single channel smart high-side switch designed to meet the requirements of industrial control systems. The low RON (30mΩ) minimizes device power dissipation, driving a wide range of output load current up to 6A DC and the 64V DC tolerance improves system robustness. The device integrates protection features such as thermal shut down, output clamp, and current limit. These features improve system robustness during fault events such as short circuit. TPS281C30x implements an adjustable current limiting circuit that improves the reliability of the system by reducing inrush current when driving large capacitive loads and minimizing overload current. In order to drive high inrush current loads such as lamps or fast charging capacitive loads, TPS281C30x implements an inrush current time period with a higher level of allowed current. The device also provides an accurate load current sense that allows for improved load diagnostics such as overload and open-load detection enabling better predictive maintenance. TPS281C30E provides enhanced Electrical Fast Transient (EFT) immunity, where the device will stay off with up to 2.5kV EFT pulse applied at VS or VOUT, 10nF output capacitor and 100pF coupling capacitor between the pulse generator and the output. The EFT level can be further increased if a larger output capacitor is used. The enhanced EFT immunity improves the system’s robustness against undesired coupling in the industrial systems. TPS281C30x is available in a small 14-pin, 4.4mm × 5mm HTSSOP leaded package (version A, B, C, D) with 0.65mm pin pitch and 20-pin, 5mm × 5mm QFN with 0.65mm pin pitch (all versions) minimizing the PCB footprint.

The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions. The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration. The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C. The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions. The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration. The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C.

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions. The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration. The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions. The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

The TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A into highly capacitive loads. High switching speeds (trand tf= 14 ns typ) are obtained with the use of BiCMOS outputs. Typical threshold switching voltages are two-thirds and one-third of VCC. The design inherently minimizes shoot-through current. A regulator is provided on TPS2816 through TPS2819 devices to allow operation with supply inputs between 14V and 40V. The regulator output can be used to power other circuits, provided power dissipation does not exceed package limitations. If the regulator is not required, VDD(the regulator input) should be connected to VCC. The TPS2816 and TPS2817 input circuits include an active pullup circuit to eliminate the need for an external resistor when using open-collector PWM controllers. The TPS2818 and TPS2819 are identical to the TPS2816 and TPS2817, except that the active pullup circuit is omitted. The TPS2828 and TPS2829 are identical to the TPS2818 and TPS2819, except that the internal voltage regulator is omitted, allowing quiescent current to drop to less than 15 µA when the inputs are high or low. The TPS28xx series devices are available in 5-pin SOT-23 (DBV) packages and operate over an ambient temperature range of –40°C to 125°C. The TPS28xx single-channel high-speed MOSFET drivers are capable of delivering peak currents of up to 2 A into highly capacitive loads. High switching speeds (trand tf= 14 ns typ) are obtained with the use of BiCMOS outputs. Typical threshold switching voltages are two-thirds and one-third of VCC. The design inherently minimizes shoot-through current. A regulator is provided on TPS2816 through TPS2819 devices to allow operation with supply inputs between 14V and 40V. The regulator output can be used to power other circuits, provided power dissipation does not exceed package limitations. If the regulator is not required, VDD(the regulator input) should be connected to VCC. The TPS2816 and TPS2817 input circuits include an active pullup circuit to eliminate the need for an external resistor when using open-collector PWM controllers. The TPS2818 and TPS2819 are identical to the TPS2816 and TPS2817, except that the active pullup circuit is omitted. The TPS2828 and TPS2829 are identical to the TPS2818 and TPS2819, except that the internal voltage regulator is omitted, allowing quiescent current to drop to less than 15 µA when the inputs are high or low. The TPS28xx series devices are available in 5-pin SOT-23 (DBV) packages and operate over an ambient temperature range of –40°C to 125°C.

The TPS2832 and TPS2833 are MOSFET drivers for synchronous-buck power stages. These devices are ideal for designing a high-performance power supply using switching controllers that do not have MOSFET drivers. The drivers are designed to deliver 2.4-A peak currents into large capacitive loads. The high-side driver can be configured as a ground-reference driver or as a floating bootstrap driver. An adaptive dead-time control circuit eliminates shoot-through currents through the main power FETs during switching transitions and provides high efficiency for the buck regulator. The TPS2832 has a noninverting input. The TPS2833 has an inverting input. The TPS2832/33 drivers, available in 8-terminal SOIC packages, operate over a junction temperature range of \x9640°C to 125°C. The TPS2832 and TPS2833 are MOSFET drivers for synchronous-buck power stages. These devices are ideal for designing a high-performance power supply using switching controllers that do not have MOSFET drivers. The drivers are designed to deliver 2.4-A peak currents into large capacitive loads. The high-side driver can be configured as a ground-reference driver or as a floating bootstrap driver. An adaptive dead-time control circuit eliminates shoot-through currents through the main power FETs during switching transitions and provides high efficiency for the buck regulator. The TPS2832 has a noninverting input. The TPS2833 has an inverting input. The TPS2832/33 drivers, available in 8-terminal SOIC packages, operate over a junction temperature range of \x9640°C to 125°C.