TPS28226 Series

4-A, 27-V half bridge gate driver with 8-V UVLO for synchronous rectification

Catalog

4-A, 27-V half bridge gate driver with 8-V UVLO for synchronous rectification

Part	Input Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Number of Drivers	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Channel Type	Package / Case	Package / Case [y]	Package / Case [x]	Driven Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Gate Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package
Texas Instruments TPS28226DR	Non-Inverting	6.8 V	8.8 V	2	33 V	Surface Mount	Synchronous	8-SOIC	3.9 mm	0.154 in	Half-Bridge	-40 °C	125 ¯C	N-Channel MOSFET	10 ns	10 ns	8-SOIC
Texas Instruments TPS28226DRBT	Non-Inverting	6.8 V	8.8 V	2	33 V	Surface Mount	Synchronous	8-VDFN Exposed Pad			Half-Bridge	-40 °C	125 ¯C	N-Channel MOSFET	10 ns	10 ns	8-SON (3x3)
Texas Instruments TPS28226D	Non-Inverting	6.8 V	8.8 V	2	33 V	Surface Mount	Synchronous	8-SOIC	3.9 mm	0.154 in	Half-Bridge	-40 °C	125 ¯C	N-Channel MOSFET	10 ns	10 ns	8-SOIC
Texas Instruments TPS28226DRBR	Non-Inverting	6.8 V	8.8 V	2	33 V	Surface Mount	Synchronous	8-VDFN Exposed Pad			Half-Bridge	-40 °C	125 ¯C	MOSFET (N-Channel) N-Channel MOSFET	10 ns	10 ns	8-SON (3x3)

Catalog

4-A, 27-V half bridge gate driver with 8-V UVLO for synchronous rectification

Key Features

• Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead TimeWide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 VWide Power System Train Input Voltage: 3 V Up to 27 VWide Input PWM Signals: 2.0 V up to 13.2-V AmplitudeCapable to Drive MOSFETs with ≥40-A Current per PhaseHigh Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW– 2 MHzCapable to Propagate <30-ns Input PWM PulsesLow-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current3-State PWM Input for Power Stage ShutdownSpace Saving Enable (Input) and Power Good (Output) Signals on Same PinThermal ShutdownUVLO ProtectionInternal Bootstrap DiodeEconomical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 PackagesHigh Performance Replacement for Popular 3-State Input DriversDrives Two N-Channel MOSFETs with 14-ns Adaptive Dead TimeWide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 VWide Power System Train Input Voltage: 3 V Up to 27 VWide Input PWM Signals: 2.0 V up to 13.2-V AmplitudeCapable to Drive MOSFETs with ≥40-A Current per PhaseHigh Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW– 2 MHzCapable to Propagate <30-ns Input PWM PulsesLow-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current3-State PWM Input for Power Stage ShutdownSpace Saving Enable (Input) and Power Good (Output) Signals on Same PinThermal ShutdownUVLO ProtectionInternal Bootstrap DiodeEconomical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 PackagesHigh Performance Replacement for Popular 3-State Input Drivers

Description

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions. The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration. The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions. The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.