TPS28225-Q1 Series

Automotive 4-A, 27-V half bridge gate driver with 4-V UVLO for synchronous rectification

Catalog

Automotive 4-A, 27-V half bridge gate driver with 4-V UVLO for synchronous rectification

Part	Mounting Type	Grade	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Driven Configuration	Qualification	Supplier Device Package	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	High Side Voltage - Max (Bootstrap) [Max]	Input Type	Package / Case	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Number of Drivers	Logic Voltage - VIL, VIH	Package / Case [y]	Package / Case [x]
Texas Instruments TPS28225TDRBRQ1	Surface Mount	Automotive	10 ns	10 ns	Half-Bridge	AEC-Q100	8-SON (3x3)	Synchronous	8.8 V	4.5 V	33 V	Non-Inverting	8-VDFN Exposed Pad	N-Channel MOSFET	-40 °C	125 ¯C	2 A	2 A	2	0.8 V 2.1 V
Texas Instruments TPS28225DR	Surface Mount		10 ns	10 ns	Half-Bridge		8-SOIC	Synchronous	8.8 V	4.5 V	33 V	Non-Inverting	8-SOIC	MOSFET (N-Channel)	-40 °C	125 ¯C	2 A	2 A	2	0.8 V 2.1 V	3.9 mm	0.154 in
Texas Instruments TPS28225DRBR	Surface Mount		10 ns	10 ns	Half-Bridge		8-SON (3x3)	Synchronous	8.8 V	4.5 V	33 V	Non-Inverting	8-VDFN Exposed Pad	MOSFET (N-Channel) N-Channel MOSFET	-40 °C	125 ¯C	2 A	2 A	2	0.8 V 2.1 V
Texas Instruments TPS28225DRBT	Surface Mount		10 ns	10 ns	Half-Bridge		8-SON (3x3)	Synchronous	8.8 V	4.5 V	33 V	Non-Inverting	8-VDFN Exposed Pad	N-Channel MOSFET	-40 °C	125 ¯C	2 A	2 A	2	0.8 V 2.1 V
Texas Instruments TPS28225D	Surface Mount		10 ns	10 ns	Half-Bridge		8-SOIC	Synchronous	8.8 V	4.5 V	33 V	Non-Inverting	8-SOIC	N-Channel MOSFET	-40 °C	125 ¯C	2 A	2 A	2	0.8 V 2.1 V	3.9 mm	0.154 in

Catalog

Automotive 4-A, 27-V half bridge gate driver with 4-V UVLO for synchronous rectification

Key Features

• Qualified for automotive applicationsDrives two N-channel MOSFETs with 14-ns adaptive dead timeWide gate drive voltage: 4.5 V up to 8.8 V with best efficiency at 7 V to 8 VWide power system train input voltage: 3 V up to 27 VWide input PWM signals: 2-V up to 13.2-V amplitudeCapable of driving MOSFETs with ≥40-A current per phaseHigh frequency operation: 14-ns propagation delay and 10-ns rise or fall time allows FSWup to 2 MHzCapable of propagating <30-ns input PWM pulsesLow-side driver sink on-resistance (0.4 Ω) prevents dV/dT related shoot-through currentThree-state PWM input for power stage shutdownSpace saving enable (input) and power good (output) signals on the same pinThermal shutdownUVLO protectionInternal bootstrap diodeEconomical SOIC-8 and thermally enhanced 3-mm × 3-mm VSON-8 packagesHigh performance replacement for popular three-state input driversQualified for automotive applicationsDrives two N-channel MOSFETs with 14-ns adaptive dead timeWide gate drive voltage: 4.5 V up to 8.8 V with best efficiency at 7 V to 8 VWide power system train input voltage: 3 V up to 27 VWide input PWM signals: 2-V up to 13.2-V amplitudeCapable of driving MOSFETs with ≥40-A current per phaseHigh frequency operation: 14-ns propagation delay and 10-ns rise or fall time allows FSWup to 2 MHzCapable of propagating <30-ns input PWM pulsesLow-side driver sink on-resistance (0.4 Ω) prevents dV/dT related shoot-through currentThree-state PWM input for power stage shutdownSpace saving enable (input) and power good (output) signals on the same pinThermal shutdownUVLO protectionInternal bootstrap diodeEconomical SOIC-8 and thermally enhanced 3-mm × 3-mm VSON-8 packagesHigh performance replacement for popular three-state input drivers

Description

The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions. The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration. The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C. The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions. The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration. The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C.