Texas Instruments

The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver. The SN74CB3Q3305 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports switching input voltage beyond the supply on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3305 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. WhenOEis low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. WhenOEis low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE,2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. WhenOEis low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE,2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. WhenOEis low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3384A is organized as an 8-bit bus switch with two output-enable (OE,OE) inputs. When OE is high orOEis low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low andOEis high, the bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver. The SN74CB3Q3345 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3345 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3384A is organized as an 8-bit bus switch with two output-enable (OE,OE) inputs. When OE is high orOEis low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low andOEis high, the bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.

The SN74CB3Q3384A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3384A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3384A is organized as two 5-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 5-bit bus switches, or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CB3Q3384A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3384A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3384A is organized as two 5-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 5-bit bus switches, or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q6800 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q6800 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q6800 is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF and a high-impedance state exists between the A and B ports. The B port is precharged to bias voltage (BIASV) through the equivalent of a 10-kresistor when ON\ is high, or if the device is powered down (VCC= 0 V). During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, ON\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CB3Q6800 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q6800 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q6800 is a 10-bit bus switch with a single output-enable (ON\) input. When ON\ is low, the 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF and a high-impedance state exists between the A and B ports. The B port is precharged to bias voltage (BIASV) through the equivalent of a 10-kresistor when ON\ is high, or if the device is powered down (VCC= 0 V). During insertion (or removal) of a card into (or from) an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage (BIASV) of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion (or removal) of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, ON\ should be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3T16210 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T16210 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see ). The SN74CB3T16210 is organized as two 10-bit bus switches with separate ouput-enable (1OE, 2OE) inputs. It can be used as two 10-bit bus switches or as one 20-bit bus switch. WhenOEis low, the associated 10-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CB3T16210 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T16210 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see ). The SN74CB3T16210 is organized as two 10-bit bus switches with separate ouput-enable (1OE, 2OE) inputs. It can be used as two 10-bit bus switches or as one 20-bit bus switch. WhenOEis low, the associated 10-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 10-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3T16211 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T16211 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels. The I/O port of this device has a pullup current source that maintains the output voltage at VCCwhen the device is ON, and the input is greater than or equal to VCC– 1. Because of the pullup current source, the output voltage level may be less than VCCwhen the operating frequency is low and the I/O port is connected to a pulldown resistor. In order to maintain the output voltage at VCC, a pullup resistor must be connected to VCCinstead of a pulldown resistor to ground. The SN74CB3T16211 is organized as two 12-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. WhenOEis low, the associated 12-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 12-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CB3T16211 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T16211 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels. The I/O port of this device has a pullup current source that maintains the output voltage at VCCwhen the device is ON, and the input is greater than or equal to VCC– 1. Because of the pullup current source, the output voltage level may be less than VCCwhen the operating frequency is low and the I/O port is connected to a pulldown resistor. In order to maintain the output voltage at VCC, a pullup resistor must be connected to VCCinstead of a pulldown resistor to ground. The SN74CB3T16211 is organized as two 12-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. WhenOEis low, the associated 12-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 12-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3T16212 is a high-speed TTL-compatible FET bus-exchange switch, with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T16212 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1). The SN74CB3T16212 operates as a 24-bit bus switch or as a 12-bit bus exchange that provides data exchanging between four signal ports. The select (S0, S1, S2) inputs control the data path of the bus-exchange switch. When the bus-exchange switch is ON, the A port is connected to the B port, allowing bidirectional data flow between ports. When the bus-exchange switch is OFF, a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, each select input should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver. The SN74CB3T16212 is a high-speed TTL-compatible FET bus-exchange switch, with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T16212 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1). The SN74CB3T16212 operates as a 24-bit bus switch or as a 12-bit bus exchange that provides data exchanging between four signal ports. The select (S0, S1, S2) inputs control the data path of the bus-exchange switch. When the bus-exchange switch is ON, the A port is connected to the B port, allowing bidirectional data flow between ports. When the bus-exchange switch is OFF, a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down, each select input should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

The SN74CB3T1G125 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T1G125 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels. The SN74CB3T1G125 is a 1-bit bus switch with a single ouput-enable (OE) input. WhenOEis low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CB3T1G125 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T1G125 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels. The SN74CB3T1G125 is a 1-bit bus switch with a single ouput-enable (OE) input. WhenOEis low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.