SN74CB3Q3306A-EP Series

DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH

Catalog

DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH

Part	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Voltage Supply Source	Type	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Independent Circuits	Circuit	Package / Case	Package / Case [custom]	Package / Case [custom]	Operating Temperature [Max]	Operating Temperature [Min]
Texas Instruments CCB3Q3306AMPWEP	8-TSSOP	2.3 V	3.6 V	Single Supply	Bus Switch	125 °C	-55 °C	Surface Mount	2	1 x 1:1	8-TSSOP	0.173 "	4.4 mm
Texas Instruments CCB3Q3306AMPWREP	8-TSSOP	2.3 V	3.6 V	Single Supply	Bus Switch			Surface Mount	2	1 x 1:1	8-TSSOP	0.173 "	4.4 mm	85 °C	-40 °C

Catalog

DUAL FET BUS SWITCH 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH

Key Features

• High-Bandwidth Data Path (up to 500 MHz(1))5-V-Tolerant I/Os With Device Powered Up or Powered DownLow and Flat ON-State Resistance (ron)Characteristics Over Operating Range (ron= 4 Ω Typ)Rail-to-Rail Switching on Data I/O Ports0- to 5-V Switching With 3.3-V VCC0- to 3.3-V Switching With 2.5-V VCCBidirectional Data Flow With Near-Zero Propagation DelayLow Input/Output Capacitance MinimizesLoading and Signal Distortion(Cio(OFF)= 3.5 pF Typ)Fast Switching Frequency (fOE= 20 MHz Max)Data and Control Inputs Provide Undershoot Clamp DiodesLow Power Consumption (ICC= 0.25 mA Typ)VCCOperating Range From 2.3 V to 3.6 VData I/Os Support 0- to 5-V Signaling Levels(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)Control Inputs Can Be Driven by TTL or5-V/3.3-V CMOS OutputsIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mAPer JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports Both Digital and Analog Applications: USB Interface,Differential Signal Interface, Bus Isolation, Low-DistortionSignal GatingSUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONSControlled BaselineOne Assembly and Test SiteOne Fabrication SiteAvailable in Military (–55°C to 125°C)Temperature RangeExtended Product Life CycleExtended Product-Change NotificationProduct Traceability(1)For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report,CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.High-Bandwidth Data Path (up to 500 MHz(1))5-V-Tolerant I/Os With Device Powered Up or Powered DownLow and Flat ON-State Resistance (ron)Characteristics Over Operating Range (ron= 4 Ω Typ)Rail-to-Rail Switching on Data I/O Ports0- to 5-V Switching With 3.3-V VCC0- to 3.3-V Switching With 2.5-V VCCBidirectional Data Flow With Near-Zero Propagation DelayLow Input/Output Capacitance MinimizesLoading and Signal Distortion(Cio(OFF)= 3.5 pF Typ)Fast Switching Frequency (fOE= 20 MHz Max)Data and Control Inputs Provide Undershoot Clamp DiodesLow Power Consumption (ICC= 0.25 mA Typ)VCCOperating Range From 2.3 V to 3.6 VData I/Os Support 0- to 5-V Signaling Levels(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)Control Inputs Can Be Driven by TTL or5-V/3.3-V CMOS OutputsIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mAPer JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports Both Digital and Analog Applications: USB Interface,Differential Signal Interface, Bus Isolation, Low-DistortionSignal GatingSUPPORTS DEFENSE, AEROSPACE, AND MEDICAL APPLICATIONSControlled BaselineOne Assembly and Test SiteOne Fabrication SiteAvailable in Military (–55°C to 125°C)Temperature RangeExtended Product Life CycleExtended Product-Change NotificationProduct Traceability(1)For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report,CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

Description

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE,2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. WhenOEis low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE,2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. WhenOEis low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.