STW48N60DM2N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 package | Transistors | 1 | Active | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STW48NM60NN-channel 600 V, 0.055 Ohm typ., 44 A MDmesh(TM) II Power MOSFET in TO-247 package | FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STW4N150N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-247 | Single FETs, MOSFETs | 1 | Active | Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on)per area, unrivalled gate charge and switching characteristics. |
STW50N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package | Transistors | 2 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STW52N60DM6N-channel 600 V, 64 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STW52NK25ZN-channel 250 V, 33 mOhm typ., 52 A, SuperMESH Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | NRND | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. |
| Single FETs, MOSFETs | 1 | Obsolete | |
STW55NM60NDN-channel 600 V, 47 mOhm typ, 51 A, FDmesh II Power MOSFET in a TO-247 package | FETs, MOSFETs | 1 | Obsolete | This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. |
STW56N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package | Single | 3 | Active | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STW56N60M2N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package | Transistors | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
