STW65N60DM6N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | Active | These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STW65N80K5N-channel 800 V, 0.07 Ohm typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW68Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO247-4 package | FETs, MOSFETs | 2 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STW68N60M6N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STW68N65DM6N-channel 650 V, 51 mOhm typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STW69N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in a TO247-4 package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
STW69N65M5N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in TO-247 package | FETs, MOSFETs | 1 | Active | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
STW6N90K5N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package | Transistors | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
| Transistors | 1 | Active | |
STW70N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package | Transistors | 2 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
