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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
STMicroelectronics STEVAL-ISA068V1Obsolete | Development Boards Kits Programmers | EVAL BOARD FOR ST1S32 |
STMicroelectronics 74VCXHQ163245TTRObsolete | Integrated Circuits (ICs) | IC TRANSLATION TXRX 2.7V 48TSSOP |
STMicroelectronics | Development Boards Kits Programmers | VNQ9050LAJ EVALUATION BOARD |
STMicroelectronics LSM303DLHCTRObsolete | Sensors Transducers | IMU ACCEL/MAG 3-AXIS I2C 14LGA |
STMicroelectronics M93C56-WMN6TObsolete | Integrated Circuits (ICs) | EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R |
STMicroelectronics | Integrated Circuits (ICs) | STM32U |
STMicroelectronics TS831-3IZObsolete | Integrated Circuits (ICs) | IC SUPERVISOR 1 CHANNEL TO92-3 |
STMicroelectronics STMPE1208SQTRObsolete | Integrated Circuits (ICs) | IC I/O EXPANDER I2C 12B 40QFN |
STMicroelectronics STM32L1-MAGNETObsolete | Development Boards Kits Programmers | IAR EXPERIMENT STM32 L1 EVAL BRD |
STMicroelectronics VNB35N07Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHAN 1:1 D2PAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| FETs, MOSFETs | 1 | Active | ||
STW56N65M2N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STW57N65M5N-channel 650 V, 56 mOhm typ., 42 A MDmesh M5 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. |
STW58N60DM2AGAutomotive-grade N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
| FETs, MOSFETs | 1 | Active | ||
STW5NK100ZN-channel 1000 V, 2.7 Ohm typ., 3.5 A SuperMESH Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | The new SuperMESH series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh products. |
| Single FETs, MOSFETs | 1 | Obsolete | ||
STW62N65M5Automotive-grade N-channel 650 V, 0.041 Ohm typ., 46 A MDmesh M5 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
| FETs, MOSFETs | 1 | Active | ||
STW65Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package | Transistors | 1 | Active | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |