STW55NM60ND Series

N-channel 600 V, 47 mOhm typ, 51 A, FDmesh II Power MOSFET in a TO-247 package

Catalog

N-channel 600 V, 47 mOhm typ, 51 A, FDmesh II Power MOSFET in a TO-247 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW55NM60ND	10 V	150 °C	5800 pF	5 V	N-Channel	25 V	MOSFET (Metal Oxide)	TO-247-3	51 A	600 V	60 mOhm	Through Hole	TO-247-3	350 W	190 nC

Catalog

N-channel 600 V, 47 mOhm typ, 51 A, FDmesh II Power MOSFET in a TO-247 package

Description

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.