| Discrete Semiconductor Products | 1 | Obsolete | |
STW38N65M5N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-247 package | Transistors | 1 | Active | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
STW3N150N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in TO-247 package | Single FETs, MOSFETs | 1 | Active | These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. |
STW3N170N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-247 package | Discrete Semiconductor Products | 1 | Active | This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. |
STW40N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 package | Single | 4 | Active | These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STW40N90K5N-channel 900 V, 0.088 Ohm typ., 40 A MDmesh K5 Power MOSFET in a TO-247 package | FETs, MOSFETs | 1 | Active | These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW40N95K5N-channel 950 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW42N60M2-EPN-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | Active | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. |
STW42N65M5N-channel 650 V, 70 mOhm typ., 33 A MDmesh M5 Power MOSFET in a TO-247 package | Transistors | 1 | Active | MDmesh V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies. |
