| Transistors | 2 | Obsolete | |
STW43N60DM2N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package | Transistors | 1 | Active | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STW45Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package | FETs, MOSFETs | 2 | Active | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
| FETs, MOSFETs | 1 | Obsolete | |
STW45N60DM6N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 1 | Active | These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STW45NM50N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | Active | This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market. |
STW45NM60N-CHANNEL 650V@TJMAX - 0.09 OHM - 45A TO-247 MDMESH™ POWER MOSFET | Transistors | 1 | Active | The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products. |
STW46NF30N-channel 300 V, 63 MOhm typ., 42 A STripFET II Power MOSFET in a TO-247 package | Transistors | 1 | Active | These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
| Transistors | 1 | Obsolete | |
STW48N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package | Single FETs, MOSFETs | 4 | Active | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
