| FETs, MOSFETs | 1 | Obsolete | |
STW15N80K5N-channel 800 V, 0.300 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | Active | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW15NK90ZN-channel 900 V, 0.40 Ohm typ., 15 A SuperMESH Power MOSFET in a TO-247 package | Transistors | 1 | Active | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. |
| FETs, MOSFETs | 1 | Obsolete | |
| Discrete Semiconductor Products | 2 | Obsolete | |
| Discrete Semiconductor Products | 1 | Obsolete | |
STW18N60DM2N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package | FETs, MOSFETs | 1 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STW18N60M2N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-247 package | FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STW18N65M5N-channel 650 V, 198 mOhm typ., 15 A MDmesh M5 Power MOSFET in a TO-247 package | Transistors | 1 | Active | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
STW18NM60NN-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247 | FETs, MOSFETs | 1 | Active | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
