STW12N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package | Discrete Semiconductor Products | 3 | Active | This device is made using the SuperMESH™ Power MOSFET technology that is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. |
STW12N120K5N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-247 package | Transistors | 1 | Active | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW12N170K5N-channel 1700 V, 2.3 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW13N-channel 600 V, 0.48 Ohm typ., 13 A SuperMesh Power MOSFET in TO-247 package | Single FETs, MOSFETs | 2 | Active | The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. |
| Bipolar (BJT) | 1 | Obsolete | |
| Transistors | 4 | Obsolete | |
STW13NK100ZN-channel 1000 V, 0.56 Ohm typ., 13 A SuperMESH Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | Active | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. |
| Discrete Semiconductor Products | 1 | Obsolete | |
| Transistors | 1 | Active | |
| Transistors | 1 | NRND | |
