STW18N65M5 Series

N-channel 650 V, 198 mOhm typ., 15 A MDmesh M5 Power MOSFET in a TO-247 package

Catalog

N-channel 650 V, 198 mOhm typ., 15 A MDmesh M5 Power MOSFET in a TO-247 package

Part	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
STMicroelectronics STW18N65M5	220 mOhm	TO-247-3	10 V	N-Channel	MOSFET (Metal Oxide)	Through Hole	25 V	15 A	110 W	TO-247-3	31 nC	1240 pF	150 °C	5 V	650 V

Catalog

N-channel 650 V, 198 mOhm typ., 15 A MDmesh M5 Power MOSFET in a TO-247 package

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.