STW18NM80N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-247 package | Single FETs, MOSFETs | 1 | Active | These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST’s proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. |
| Transistors | 1 | Obsolete | |
STW19NM50NN-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-247 | Discrete Semiconductor Products | 1 | Active | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STW19NM60NAutomotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package | FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STW20N-channel 500 V, 0.23 Ohm, 20 A SuperMESH(TM) Power MOSFET Zener-protected in TO-247 package | Transistors | 4 | Active | The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. |
| Single FETs, MOSFETs | 1 | Obsolete | |
| Bipolar (BJT) | 1 | Obsolete | |
| Discrete Semiconductor Products | 2 | Obsolete | |
STW20N90K5N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a TO-247 package | Transistors | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW20N95DK5N-channel 950 V, 275 mOhm typ., 18 A MDmesh DK5 Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | Active | These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters. |
