STW18NM60N Series

N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247

Catalog

N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs
STMicroelectronics STW18NM60N	600 V	4 V	110 W	13 A	N-Channel	35 nC	TO-247-3	TO-247-3	150 °C	-55 °C	1000 pF	MOSFET (Metal Oxide)	10 V	Through Hole	25 V	285 mOhm

Catalog

N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-247

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.