STW15N80K5 Series

N-channel 800 V, 0.300 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-247 package

Catalog

N-channel 800 V, 0.300 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-247 package

Part	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STW15N80K5	Through Hole	TO-247-3	150 °C	-55 °C	375 mOhm	N-Channel	1100 pF	32 nC	TO-247-3	14 A	MOSFET (Metal Oxide)	800 V	5 V	30 V	190 W	10 V

Catalog

N-channel 800 V, 0.300 Ohm typ., 14 A MDmesh K5 Power MOSFET in a TO-247 package

Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.