| Single FETs, MOSFETs | 1 | Active | |
| Single FETs, MOSFETs | 1 | Obsolete | |
STP3N150N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in TO-220 package | Transistors | 1 | Active | These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. |
| Discrete Semiconductor Products | 1 | NRND | |
STP3NK60ZN-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in TO-220 package | Discrete Semiconductor Products | 1 | NRND | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP3NK60ZFPN-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in TO-220FP package | Discrete Semiconductor Products | 1 | NRND | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP3NK80ZN-channel 800 V, 3.6 Ohm typ., 2.5 A SuperMESH Power MOSFET in a TO-220 package | FETs, MOSFETs | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP3NK90N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220FP package | Single FETs, MOSFETs | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP3NK90ZN-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220 package | FETs, MOSFETs | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP40N-Channel 100V - 0.028 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) II POWER MOSFET | Single | 2 | Active | This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. |
