STP4N150 Series

N-channel 1500 V, 5 Ohm typ., 4 A PowerMESH Power MOSFET in a TO-220 package

Catalog

N-channel 1500 V, 5 Ohm typ., 4 A PowerMESH Power MOSFET in a TO-220 package

Part	Supplier Device Package	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Operating Temperature
STMicroelectronics STP4N150	TO-220	Through Hole	30 V	10 V	4 A	N-Channel	50 nC	7 Ohm	TO-220-3	1300 pF	1500 V	MOSFET (Metal Oxide)	5 V	150 °C

Catalog

N-channel 1500 V, 5 Ohm typ., 4 A PowerMESH Power MOSFET in a TO-220 package

Description

Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on)per area, unrivalled gate charge and switching characteristics.