STMicroelectronics

The 54VCXH162244 is a low voltage CMOS 16-bit bus buffer (non inverted) fabricated with submicron silicon gate and five-layer metal wiring C²MOS technology. It is ideal for low power and very high speed 1.8 V to 3.6 V applications; it can be interfaced to 3.6 V signal environment for both inputs and outputs. Any nG output control governs four BUS buffers. Output enable input (nG) tied together gives full 16-bit operation. When nG is low, the outputs are on. When nG is high, the output are in high impedance state. This device is designed to be used with 3-state memory address drivers, etc. Bus hold on data inputs is provided in order to eliminate the need for external pull-up or pull-down resistor. The device circuits is including 26 Ω series resistance in the outputs. These resistors permit to reduce line noise in high speed applications. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2 kV ESD immunity and transient excess voltage.

The 54VCXH163245 is a rad-hard advanced high-speed CMOS, 16-bit bidirectional, multi-purpose transceiver with 3-state outputs and cold sparing. Designed to be used as an interface between a 3.3 V bus and a 1.8 V bus in mixed 3.3 V/1.8 V supply systems, it achieves high-speed operations while maintaining the CMOS low power dissipation. All pins have cold spare buffers to change them to high impedance when VDD is tied to ground. This IC is intended for a two-way asynchronous communication between data buses. The direction of data transmission is determined by the nDIR inputs.

The M74HC365 is an advanced high-speed CMOS hex bus buffer (3-state) fabricated with silicon gate C2MOS technology. All six buffers are controlled by the combination of two enable inputs (G1andG2). All outputs of these buffers are enabled only when bothG1andG2inputs are held low. Under all other conditions these outputs are disabled in a high-impedance state. The M74HC365 has non-inverting outputs. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

The 74LCX00 device is a low-voltage CMOS quad dual input NAND gate manufactured with sub-micron silicon gate and double layer metal wiring C2MOS technology. It is ideal for low-power and high-speed 3.3 V applications and can be interfaced to a 5 V signal environment for inputs. It has the same speed performance at 3.3 V as the 5 V AC/ACT family, combined with lower power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2 kV ESD immunity and transient excess voltage.

The 74LCX07 device is a low-voltage CMOS open drain hex buffer manufactured with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low-power and high-speed 3.3 V applications and can be interfaced to a 5 V signal environment for inputs. The internal circuit is composed of 2 stages including a buffer output, which provides high noise immunity and stable output. It has the same speed performance at 3.3 V as the 5 V AC/ACT family, combined with lower power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2 kV ESD immunity and transient excess voltage.

The 74LCX125 device is a low-voltage CMOS quad bus buffer manufactured with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low-power and high-speed 3.3 V applications and can be interfaced to a 5 V signal environment for both inputs and outputs. The device requires the 3-state control input G to be set high to place the output in the high impedance state. It has the same speed performance at 3.3 V as the 5 V AC/ACT family, combined with lower power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2 kV ESD immunity and transient excess voltage.