Discrete Semiconductor Products
A2TBH45M65W3-FC
ActiveSTMicroelectronics
SILICON CARBIDE MOSFET, TRIPLE BOOST, HALF BRIDGE, PENTA N CHANNEL, 52 A, 650 V, 72 MILLIOHMS, ACEPA… MORE
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DocumentsA2TBH45M65W3-FC | Datasheet
Discrete Semiconductor Products
A2TBH45M65W3-FC
ActiveSTMicroelectronics
SILICON CARBIDE MOSFET, TRIPLE BOOST, HALF BRIDGE, PENTA N CHANNEL, 52 A, 650 V, 72 MILLIOHMS, ACEPA… MORE
Deep-Dive with AI
DocumentsA2TBH45M65W3-FC | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | A2TBH45M65W3-FC |
|---|---|
| Channel Count | 5 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge |
| Current - Continuous Drain (Id) (Tj) | 28 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Max) | 79 nC |
| Input Capacitance (Ciss) (Max) | 1840 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Module |
| Rds On (Max) | 35 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) | 4.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | N/A | 18 | $ 79.24 | 1m+ |
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Description
General part information
A2TBH45M65W3-FC
SILICON CARBIDE MOSFET, TRIPLE BOOST, HALF BRIDGE, PENTA N CHANNEL, 52 A, 650 V, 72 MILLIOHMS, ACEPA… MORE
Documents
Technical documentation and resources