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2ST501T
Discrete Semiconductor Products

2ST501T

Active
STMicroelectronics

TRANS NPN DARL 350V 4A TO-220

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2ST501T
Discrete Semiconductor Products

2ST501T

Active
STMicroelectronics

TRANS NPN DARL 350V 4A TO-220

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2ST501T
Current - Collector (Ic) (Max)4 A
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)2000
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Package NameTO-220
Power - Max100 VA
Transistor TypeNPN, Darlington
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)350 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 992$ 2.171m+

CAD

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Description

General part information

2ST501T

TRANS NPN DARL 350V 4A TO-220

Documents

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