STP11NK40ZFPN-channel 400 V, 0.49 Ohm typ., 9 A SuperMESH Power MOSFET in TO-220FP package | Single FETs, MOSFETs | 1 | Active | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP11NK50ZFPN-channel 500 V, 0.48 Ohm typ., 10 A SuperMESH Power MOSFET in TO-220FP package | Transistors | 1 | NRND | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. |
STP11NM60N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh II Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 1 | NRND | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. |
STP11NM60NDN-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 1 | Obsolete | This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. |
STP12N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-220 package | Transistors | 10 | Active | The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. |
| FETs, MOSFETs | 2 | Obsolete | |
STP120N4F6N-channel 40 V, 3.8 mOhm, 80 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET | FETs, MOSFETs | 1 | Active | This device is 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. |
STP120NF10N-channel 100 V, 9 mOhm typ., 110 A STripFET II Power MOSFET in TO-220 package | Discrete Semiconductor Products | 1 | Active | These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
STP12N120K5N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package | Discrete Semiconductor Products | 1 | Active | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STP12NM50FPN-channel 500 V, 300 mOhm typ., 12 A MDmesh Power MOSFET in a TO-220FP package | Transistors | 1 | Active | These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. |
