STP140N8F7N-channel 80 V, 3.5 mOhm typ., 90 A STripFET F7 Power MOSFET in TO-220 package | FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STP140NF75N-CHANNEL 75V - 0.0065 OHM -120A TO-220 STripFET II MOSFET | Single FETs, MOSFETs | 1 | Active | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. |
| Discrete Semiconductor Products | 1 | Obsolete | |
| Discrete Semiconductor Products | 1 | Obsolete | |
STP14NK60ZFPN-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in TO-220FP package | Transistors | 1 | Active | These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP15N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package | Transistors | 2 | Active | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
| Transistors | 3 | Active | |
STP150N10F7N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in TO-220 package | FETs, MOSFETs | 1 | Active | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STP150N10F7AGAutomotive N-channel 100 V, 4.2 mOhm typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package | Single FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
| Discrete Semiconductor Products | 2 | Obsolete | |
