STP120N4F6 Series

N-channel 40 V, 3.8 mOhm, 80 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET

Catalog

N-channel 40 V, 3.8 mOhm, 80 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET

Part	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Grade	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Technology	Vgs (Max)	Mounting Type	Qualification	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STP120N4F6	4 V	N-Channel	10 V	65 nC	4.3 mOhm	Automotive	40 V	110 W	3850 pF	TO-220-3	MOSFET (Metal Oxide)	20 V	Through Hole	AEC-Q101	TO-220	175 °C	-55 °C

Catalog

N-channel 40 V, 3.8 mOhm, 80 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET

Description

This device is 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.