| Power Management (PMIC) | 3 | Obsolete | |
STP08CP05Low-voltage, low current power 8-bit shift register | Integrated Circuits (ICs) | 3 | Active | The STP08CP05 is a monolithic, low voltage, low current, power 8-bit shift register designed for LED panel displays. The STP08CP05 contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. In the output stage, eight regulated current sources were designed to provide 5-100 mA constant current to drive the LEDs, the output current setup time is 11 ns (typ), thus improving the system performance.
The STP08CP05 is backward compatible in functionality and footprint with STP8C/L596. Through an external resistor, users can adjust the STP08CP05 output current, controlling in this way the light intensity of LEDs, in addition, user can adjust LED’s brightness intensity from 0% to 100% viaOEpin.
The STP08CP05 guarantees a 20 V output driving capability, allowing users to connect more LEDs in series. The high clock frequency, 30 MHz, also satisfies the system requirement of high volume data transmission. The 3.3 V of voltage supply is useful for applications that interface with any micro from 3.3 V. Compared with a standard TSSOP package, the TSSOP exposed pad increases heat dissipation capability by a 2.5 factor. |
STP08DP05Low-voltage 8-bit constant current LED sink with full outputs error detection | LED Driver Evaluation Boards | 5 | Active | The STP08DP05 is a monolithic, low voltage, low current power 8-bit shift register designed for LED panel displays. The STP08DP05 contains a 8-bit serial-in, parallel-out shift register that feeds a 8-bitD-type storage register. In the output stage, eight regulated current sources were designed to provide 5-100 mA constant current to drive the LEDs.
The STP08DP05 is backward compatible in the functionality and footprint with STP8C/L596 and extends its functionality with open and short detection on the outputs. The detection circuit checks 3 different conditions that can occur on the output line: short to GND, short to VOor open line. The data detection results are loaded in the shift register and shifted out via the serial line output.
The detection functionality is implemented without increasing the pin number, through a secondary function of the output enable and latch pin (DM1 and DM2 respectively), a dedicated logic sequence allows the device to enter or leave from detection mode. Through an external resistor, users can adjust the STP08DP05 output current, controlling in this way the light intensity of LEDs, in addition, user can adjust LED’s brightness intensity from 0% to 100% viaOE/DM2pin.
The STP08DP05 guarantees a 20 V output driving capability, allowing users to connect more LEDs in series. The high clock frequency, 30 MHz, also satisfies the system requirement of high volume data transmission. The 3.3 V of voltage supply is well useful for applications that interface any micro from 3.3 V. Compared with a standard TSSOP package, the TSSOP exposed pad increases heat dissipation capability by a 2.5 factor. |
STP10N-channel 800 V, 0.78 Ohm typ., 9 A SuperMESH Power MOSFETs in a TO-220FP package | Single | 10 | Active | These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STP100N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package | FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STP100N10F7N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package | Transistors | 1 | Active | These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STP100N8F6N-channel 80 V, 0.008 Ohm typ., 100 A, STripFET F6 Power MOSFET in a TO-220 package | Transistors | 1 | Active | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STP100NF04N-channel 40 V, 0.0043 Ohm typ., 120 A, STripFET(TM) II Power MOSFET in TO-220 package | Discrete Semiconductor Products | 1 | Active | These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
STP105N3LLN-channel 30 V, 2.7 mOhm typ., 150 A STripFET H6 Power MOSFET in a TO-220 package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. |
STP10N105K5N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-220 package | FETs, MOSFETs | 1 | Active | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
