STP11NM60ND Series

N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a TO-220 package

Catalog

N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a TO-220 package

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STP11NM60ND	450 mOhm	5 V	10 V	25 V	TO-220-3	N-Channel	10 A	150 °C	MOSFET (Metal Oxide)	30 nC	90 W	600 V	TO-220	Through Hole	850 pF

Catalog

N-channel 600 V, 370 mOhm typ., 10 A FDmesh II Power MOSFET in a TO-220 package

Description

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.